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研究生: 林宏旻
Hung Min Lin
論文名稱: 製備與鑑定新穎一維奈米結構:氮化鎵與二氧化矽
指導教授: 陳家俊
Chen, Chia-Chun
學位類別: 碩士
Master
系所名稱: 化學系
Department of Chemistry
論文出版年: 2003
畢業學年度: 91
語文別: 中文
論文頁數: 80
中文關鍵詞: 奈米氮化鎵二氧化矽
英文關鍵詞: nano, gallium nitride, silicon dioxide
論文種類: 學術論文
相關次數: 點閱:117下載:0
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  • 藉由VLS與SLS機制,我們成功地合成出具有特殊方向性的刷狀氮化鎵奈米晶體、非晶相二氧化矽奈米線,及二氧化矽包覆銦之一維奈米結構。
    結合二次化學氣相沉積與氮化處理,我們製備出同質奈米接合產物--刷狀氮化鎵奈米結構其主軸奈米線直徑約70~150奈米,輻向奈米棒直徑約20~70奈米,依特殊對稱性排列於主軸上。進一步晶體結構分析得知,刷狀奈米晶體為單晶wurtzite氮化鎵結構,輻向奈米棒沿主軸之[01-1]方向磊晶而成,導致輻向奈米棒依特殊對稱方式排列。本實驗可應用於製備其他同質或異質奈米接合結構,如InN on GaN等。
    此外,藉由低共熔點之鎵作為催化劑,並結合SLS機制,我們推測可於較低溫度下製備出二氧化矽奈米線。分析結果顯示,產物為非晶相二氧化矽奈米線,其直徑約10~40奈米並具有均一長度,垂直基板成長並排列成薄膜狀。實驗結果不如預期可降低奈米線成長溫度,然而此方法卻可推廣至其他低熔點金屬,催化成長高排列性之奈米線。
    二氧化矽包覆銦之一維奈米結構的發現,是在成長磷化銦奈米線之偶然情況下被合成出來的。近一步鑑定得知,非晶相之二氧化矽管壁包覆著間斷的結晶性銦奈米棒,其管壁外徑約300~600奈米、內徑約200~500奈米。銦為低熔點高沸點、高膨脹係數之金屬,這使得二氧化矽包覆銦之一維奈米結構可應用於奈米尺寸下的溫度量測。
    利用簡單高溫化學氣相沉積設備,我們製備出特殊一維奈米結構,關於其性質將有更深入的研究探討,而其潛在應用價值也是未來研究的重點。

    A simple route for the synthesis of unique 1D nanostructures, including brush-like gallium nitride nanostructure, oriented amorphous silicon nanowires and In@SiO2 nanocables, was developed on the basis of VLS and SLS mechanisms.
    GaN nanobrushes with geometric symmetries were fabricated via a two-step growth process. Morphological studies indicated the diameters of trunk nanowires and branch nanorods ranged from 70 to 150nm and 20 to 70nm respectively. According to crystal structure analyses, most nanobrushes exhibited single crystalline structure indexed to h-GaN and branch nanorods were epitaxially grown on trunk nanowires along direction of [01-1].
    Using low-melting-point metal as catalyst, the practicability of silica nanowires grown at lower temperature was expected. Amorphous silica nanowires with diameters of 10~40nm and length of up to ~50m were formed via SLS mechanism catalyzed by molten Ga metal. Aligned nanowires with uniform length were arranged to thin film. Growth of nanowires occurred at 900℃ in spite of expect at lower temperature. However, the SLS method could be generalized to other low-melting metals, such as In, Bi and Sn, to grow aligned various nanowires.
    In@SiO2 nanocables were discovered accidentally as we researched in InP nanowires growth. Structural characterization revealed that nanocables composed of discontinuous crystalline In core with diameters of 200~500nm and amorphous silica shell with diameter from 300~600nm. In@SiO2 nanocables may be applied to nanoscale thermometer due to high expansion coefficient of In metal.
    Unique 1D nanostructures described above are expected to potential application on optoelectronics, NEMS and biochemistry.

    目錄…………………………………………………………………......I 中文摘要………………………………………………………………..IV 英文摘要……………………………………………………………......V 第一章 緒論………………………………………………………...…1 1.1奈米材料科學簡介………………………………………………..1 1.2奈米材料簡介……….…………………………………………….2 1.3能帶與能隙. ……………………………………………………...3 1.4量子限量化效應………………………………………………….7 1.5表面效應…………………………………………………………10 1.6奈米材料發展現況與應用潛力………………………………...12 第二章 研究動機……………………………………………………..15 2.1 Bottom up 與Top Down…………………………………….....15 2.2一維奈米材料的合成………………………………………......17 第三章 合成刷狀氮化鎵奈米晶體……………………………..……20 3.1實驗目的……………………………………………………..…20 3.2實驗裝置與總反應流程………………………………….….….21 3.3實驗步驟…………………………………………………….….22 3.3.1實驗前處理---矽晶片的清洗…………………………...22 3.3.2塗佈催化劑…………………………………………….23 3.3.3VS機制成長三氧化二鎵奈米帶……………………….23 3.3.4三氧化二鎵奈米帶氮化鍛燒為氮化鎵奈米線…….…24 3.3.5成長刷狀氮化鎵奈米晶體………………………….…25 3.4實驗產物的分析與鑑定……………………………….….……27 3.4.1三氧化二鎵奈米帶……………………………….……27 3.4.2氮化後產物的分析與鑑定………………………….…29 3.4.3刷狀氮化鎵奈米晶體的分析鑑定…………………….31 3.5結果與討論…………………………………………………..…32 第四章 合成高排列性二氧化矽奈米線……………………………..35 4.1實驗目的……………………………………………………..…35 4.2實驗裝置與反應流程…………………………………………..36 4.3實驗產物的分析與鑑定……………………………………..…38 4.4結果與討論……………………………………………………..40 第五章 二氧化細胞覆銦奈米結構…………………………………..43 5.1實驗目的………………………………………………………..43 5.2實驗裝置與步驟………………………………………………..43 5.3實驗產物的分析與鑑定……………………………………..…45 5.4結果與討論……………………………………………………...46 第六章 總結與未來展望……………………………………………..50 附錄一:實驗藥品……………………………………………..………75 附錄二:實驗儀器……………………………………………………..76 參考文獻………………………………………………………………..77

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