本論文主要探討基板傾斜上經由Stranski-Krastanow成長模式所生成的量子點的成長特性與光學性質。我們分別對基板傾斜2°、6°、10°以及15°樣品進行光調制反射實驗與光致螢光實驗。

在光調制反射實驗中，譜圖內有來自濕層與砷化鎵基板的訊號，但是未觀察到明顯的量子點訊號。光致螢光實驗內，我們分別對四組樣品採用改變激發功率與調高溫度的方式，由譜形所產生的變化來探討載子在量子點內的束縛能級間的光學躍遷和載子在不同尺寸的量子點群之間的轉換。我們透過光譜與理論模型所計算出隨量子點尺寸變化的光學躍遷能量值之間的比較，得到對應螢光譜峰的量子點基底長度。

由四組基板傾斜樣品個別低溫螢光譜形的高斯擬合結果中，可歸納出當基板傾斜角度增加時，螢光譜峰呈現藍移，顯示出載子在量子點內受到的束縛能量變大，因此樣品上的量子點尺寸隨傾斜基板角度變大而變小。此外，基板傾斜角度變大時，樣品的螢光譜峰強度也相對增強，意味著樣品上的量子點密度也跟傾斜角度增加而變密。

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