我們利用重力沉澱的方法，讓直徑0.5微米的二氧化矽粒子在氧化銦錫導電玻璃上以自組裝的方式，形成排列整齊的最密堆積結構。經過有系統的研究電流強度、沉澱時間、電解質濃度、溶劑和溫度等條件後，可以用電鍍的方式，在排列整齊的二氧化矽粒子基板上電鍍出硒化鋅、硒化鎘、碲化鎘和砷化鎵四種不同的半導體薄膜。然後蝕刻掉二氧化矽，就可以得到三維的半導體孔洞結構，此結構的三維週期排列、結構的完整性和光學性質都很優異。
藉著在氧化銦錫導電玻璃上用光微影蝕刻的方法設計出缺陷，然後利用重力沉澱的方式在蝕刻過的玻璃上形成蛋白石結構。再使用電化學沉澱的方法電鍍不同的半導體，電鍍完後用氫氟酸蝕刻二氧化矽粒子，就可以在多孔洞結構中形成微米通道。此通道的寬度和深度約在2到4微米之間而且是直角形狀。

We prepare close packed colloidal arrays of 0.5 mm silica assembled on an indium tin oxide (ITO) substrate surface using sedimentation. Through systematic studies on current density, deposition time, concentrations of electrolytes, solvents and temperatures etc., we are able to fabricate the films of four different semiconductors, ZnSe, CdSe, CdTe, GaAs, onto the silica arrays by electrochemical depositions. Following by removal of silica, 3D macroporous structures made from those semiconductors are built, and the structure exhibit excellent 3D periodicity, uniformity and also optical properties.
Following by the pattern of artificial defects onto ITO substrate, we fabricate microchannels that have been created artificially using lithography method. After sedimentation silica arrays assembled on ITO substrate, it can be used as a template for the electrochemical depositions of various semiconductors. The microchannels inside a macroporous structure were fabricated after the template was immersed in HF solution. The microchannels have a width and depth of 2~4 mm and a rectangularity.

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