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研究生: 徐健倫
Chien Lun Hsu
論文名稱: 光熱作用下相變化薄膜奈米結構之原子力顯微量測研究
Study of optical-thermal interaction of nano structure on Ge2Sb2Te5 phase-change thin film by atomic force microscope
指導教授: 蔡定平
Tsai, Din-Ping
學位類別: 碩士
Master
系所名稱: 光電工程研究所
Graduate Institute of Electro-Optical Engineering
論文出版年: 2008
畢業學年度: 96
語文別: 中文
論文頁數: 64
中文關鍵詞: 相變化薄膜原子力顯微奈米結構
英文關鍵詞: phase change thin film, atomic force microscope, nano structure
論文種類: 學術論文
相關次數: 點閱:176下載:0
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  • 本論文是使用原子力顯微術( Atomic Force Microscopy ),針對熱微影術( Thermal- lithography )以及動態測試儀( Dynamic Optical Disk Tester )於鍺銻碲( Ge2Sb2Te5 )相變化薄膜上製作之奈米結構作表面形貌量測研究。
    首先討論在改變相變化薄膜厚度情況下,使用熱微影術製作單線
    結構所產生的影響;透過光學影像與使用原子力顯微術所獲得的表面形貌做比較,我們可以進一步瞭解雷射光束作用於相變化薄膜上的物理特性。
    接著利用動態測試儀寫下重覆作用之記錄點,產生弧形「︵」結構;藉由寫入策略的調變來控制此重複性結構出現的頻率。一樣的,透過原子力顯微術來獲取表面形貌,進一步統計出此結構產生的週期;並且嘗試改變雷射的寫入功率,觀察此結構表面形貌的變化。
    最後我們量測獲得寫下的線結構最細線寬為144nm,以及弧形「︵」結構最小的週期為141nm。

    In this study, we use Atomic Force Microscopy to measure the surface topography of nano structure made by Thermal-lithography and dynamic optical disk tester on phase-change material Ge2Sb2Te5 thin film.
    First, we use Thermal-lithography to make a single line structure on different thickness of phase change thin film. We compare the CCD images and surface topography images to know more about the physical properties of laser interaction on phase change thin film.
    Then we write over recording marks by Dynamic Optical Disk Tester and it becomes a segmental structure. We can control this repetitive segmental structure by changing writing strategy. As the same, we get the surface topography by atomic force microscopy and count the periods of these structures with different laser writing power.
    Finally, we measure the smallest line width of single line width is 144nm and the periods of the segmental structure are 141nm.

    中文摘要………………………………………………..…….Ⅰ 英文摘要……………………………………………..…........Ⅱ 致謝……………………………………………………...…....Ⅲ 目錄………………………………………...…………….…...Ⅳ 圖目錄………………………………...………..…………..…Ⅶ 第 一 章 緒論………………………………………........………….1 1-1 相變化材料發展及應用……......……………………...………..1 1-2 相變化材料之性質.......……......……………………...………...1 1-3 鍺銻碲(Ge2Sb2Te5)相變化材料之結構與特..............………...7 1-4 相變化光碟........................................................................10 第 二 章 實驗儀器介紹. ..................................................14 2-1奈米薄膜之製備 .................................................................14 2-1-1 樣品製作參數 ..............................................................17 2-2 熱微影術實驗架構.............................................................18 2-2-1熱微影術實驗架構 ........................................................18 2-3 動態測試儀(Dynamic optical disc tester)簡介.....................21 2-3-1 動態光碟測試機設備架構..............................................22 2-3-2 伺服控制.......................................................................24 2-3-2-1 動態對焦 (Dynamic Focus)....................................24 2-3-2-2 動態循軌 (Dynamic Tracking)................................24 2-3-2-3 寫入策略 (Writing Strategy)....................................25 2-3-2-4記錄點長度...............................................................26 2-4 原子力顯微儀(Atomic Force Microscopy)介紹.......................27 2-4-1 原子力顯微儀工作模式..................................................27 2-4-2 實驗所使用之原子力顯微儀...........................................32 第 三 章 實驗結果與討論......................................................33 3-1 熱微影術製作單線結構...................................................33 3-1-1 樣品結構與寫入參數..........……………...........………...33 3-1-2 光學反射影像之實驗結果......………………………........34 3-1-3 原子力顯微儀量測表面形貌之實驗結果.........................36 3-1-3-1 GST=15nm實驗結果.................................................36 3-1-3-2 GST=20nm實驗結果.................................................38 3-1-3-3 GST=25nm實驗結果.................................................40 3-1-3-4 GST=30nm實驗結果.................................................42 3-1-4 實驗結果統計與討論......................................................45 3-2 光碟測試機製作週期性奈米結構..........................................47 3-2-1 樣品結構與寫入參數......................................................47 3-2-2 原子力顯微儀量測表面形貌之實驗結果.........................48 3-2-2-1 雷射寫入功率5mW實驗結果..................................48 3-2-2-2 雷射寫入功率6mW實驗結果..................................50 3-2-2-3 雷射寫入功率7mW實驗結果..................................53 3-2-2-4 雷射寫入功率8mW實驗結果..................................55 3-2-3 實驗結果統計與討論.........................................................58 第 四 章 結論………………………………………………60 參考文獻………………………………………………………61

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