大多數的半導體材料，例如矽，在存在電場的情況下其光學性質不會有顯著變化。這使得具有大電光響應的材料（例如鍺和砷化鎵）與矽的CMOS製造集成變得困難。然而，在石墨烯等二維材料中，因其特殊的能帶結構和零能隙的特性，電場效應可以引起顯著的光吸收變化，但是由於石墨烯在可見光頻率下缺乏能隙，因此其在實際應用中存在一定的限制。
單層二硫化鉬（MoS2）是一種最為廣泛研究的二維材料之一，由一層鉬原子和硫原子組成。與半金屬石墨烯不同，單層二硫化鉬（1H-MoS2）是一種具有1.85電子伏特直接能隙的半導體材料，因此在可見光範圍內具有光學活性。我們製備了單層二硫化鉬元件，並研究了在外部藉由離子凝膠施加外加電場時其光學性質的變化。
通過對單層二硫化鉬材料施加外部電場，我們可以實現光致發光量子產率和吸收係數的控制。這意味著我們可以通過調節外部電場來調節二硫化鉬材料的光學響應，從而實現在可見光範圍內的電控制光學元件的應用潛力。此研究為利用二硫化鉬這種具有特殊光學性質的二維材料在光電子學和光子學領域中的應用提供了新的可能性。

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