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研究生: 謝伯宜
Hsieh, Po-I
論文名稱: 矽在銀/矽(111)-(√3x√3)與銀/鍺(111)-(√3x√3)表面上的成長
The growth of silicon on Ag/Si(111)-(√3x√3) and Ag/Ge(111)-(√3x√3) surfaces
指導教授: 傅祖怡
Fu, Tsu-Yi
學位類別: 碩士
Master
系所名稱: 物理學系
Department of Physics
論文出版年: 2014
畢業學年度: 102
語文別: 中文
論文頁數: 155
中文關鍵詞: 掃描穿隧式顯微鏡矽烯
英文關鍵詞: STM, Silicene, Silicon, Germanium
論文種類: 學術論文
相關次數: 點閱:277下載:11
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  • 本實驗將矽原子蒸鍍於不同表面溫度之銀/矽(111)-(√3x√3)與銀/鍺(111)-(√3x√3)表面,並以掃描穿隧式顯微鏡(STM)觀察矽原子於兩表面的成長。在矽/銀/矽系統中,√3x√3島緣之下層發生了矽-銀交換的現象,矽原子將以Step-growth的形式自√3x√3島緣併入基底,使得上層√3x√3島面積比例上升。在矽/銀/鍺系統中,在表面上可觀察到兩種規則性結構,分別為 √3x√3島以及有序結構。√3x√3島為矽原子與下方銀原子層交換所形成之週期性島,有序結構為矽原子於表面上排列組成之單層矽結構。該有序結構依原子排列方式,可進一步區分為2x2六角結構以及矩形結構。

    In this experiment, we deposited Si atoms on Ag/Si(111)-(√3x√3) and Ag/Ge(111)-(√3x√3) surfaces at different surface temperature and observed the growth of Si atoms on surfaces by Scanning Tunneling Microscope (STM). In Si/Ag/Si system, there are Si-Ag exchange at lower layer of √3x√3 island edges. Si atoms will join into substrate at island edges with step-growth mode. It let the area ratio of upper √3x√3 islands increase. In Si/Ag/Ge system, there are two kinds of regular structures, √3x√3 island and order structure, on surfaces. √3x√3 islands are regular structures which are formed by the exchange between Si atoms and under Ag layers. Order structures are single layer of Si atoms. It can be divided into 2x2 hexagonal structure and rectangular structure by different arrangements of atoms.

    目錄 摘要 I Abstract II 目錄 III 第一章 緒論 1 第二章 實驗原理與方法 3 2-1 基本原理 3 2-1-1 穿隧效應 3 2-1-2 表面能階 5 2-2 STM原理與實作 6 2-2-1 STM原理 6 2-2-2 定電流模式 9 2-2-3 定高度模式 11 2-2-4 修針方法 12 第三章 實驗儀器 14 3-1 實驗環境 ── 超高真空 14 3-2 實驗儀器配置 15 3-3 掃描穿隧式顯微鏡 16 3-3-1 步進器 17 3-3-2 掃描頭 17 3-3-3 避震裝置 18 3-3-4 電子控制系統 18 3-4 真空幫浦系統 19 3-4-1 旋葉式機械幫浦 19 3-4-2 渦輪分子幫浦 20 3-4-3 離子幫浦 22 3-4-4 鈦昇華幫浦 23 3-5 離子真空計 24 3-6 蒸鍍系統 25 3-6-1 K-cell蒸鍍槍 25 3-6-2 電子束蒸鍍槍 27 3-7 控溫系統 28 3-8 離子濺射槍 29 3-9 殘氣分析儀 30 第四章 實驗操作 31 4-1 實驗流程圖 31 4-2 超高真空環境建立 33 4-3 前置作業 37 4-3-1 STM探針製備 37 4-3-2 樣品準備 42 4-4 基底清潔與製備 44 4-4-1 矽(111)-(7x7) 重構 44 4-4-2 銀/矽(111)-(√3x√3) 重構 45 4-4-3 鍺(111)-c(2x8) 重構 46 4-4-4 銀/鍺(111)-(√3x√3) 重構 48 第五章 實驗數據與討論 ── 矽在銀/矽(111)-(√3x√3)系統 49 5-1 0.2 ML矽在銀/矽(111)-(√3x√3)表面上的成長 ── 不同蒸鍍環境 49 5-1-1 於室溫 (300K) 蒸鍍 50 5-1-2 於370K蒸鍍 52 5-1-3 於420K蒸鍍 54 5-1-4 於470K蒸鍍 56 5-1-5 於520K蒸鍍 58 5-1-6 於570K蒸鍍 59 5-1-7 於620K蒸鍍 60 5-1-8 於670K蒸鍍 61 5-2 不同蒸鍍環境對矽在銀/矽(111)-(√3x√3)表面上成長的影響 62 5-3 矽在銀/矽(111)-(√3x√3) 表面上的成長 ── 不同鍍量 74 5-3-1 於570K蒸鍍0.4ML矽 75 5-3-2 於570K蒸鍍0.8ML矽 77 5-3-3 於670K蒸鍍0.4ML矽 79 5-3-4 於670K蒸鍍0.8ML矽 81 5-4 不同鍍量對矽在銀/矽(111)-(√3x√3)表面上成長的影響 83 5-4-1 矽原子於570K的成長 83 5-4-2 矽原子於670K的成長 89 第六章 實驗數據與討論 ──矽在銀/鍺(111)-(√3x√3)系統 93 6-1 0.4 ML矽在370K之銀/鍺(111) -(√3x√3)表面上的成長與討論 94 6-1-1 正負偏壓下的簡易結構 95 6-1-2 有序結構 101 6-1-3 有序結構模型範例 114 6-1-4 √3x√3島 125 6-2 0.2 ML矽在銀/鍺(111)-(√3x√3)表面上的成長與討論 128 6-2-1 於室溫 (300K) 蒸鍍 128 6-2-2 於370K蒸鍍 136 6-2-3 於420K蒸鍍 138 6-2-4 於620K蒸鍍 144 6-3 綜合討論 145 第七章 實驗結論 151 參考文獻 153

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