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研究生: 薛群達
Shiue Chiun Da
論文名稱: 相變化薄膜光熱效應奈米微影
Nanolithography by Opto-thermal Effect of Phase-change Thin Film
指導教授: 蔡定平
Tsai, Din-Ping
學位類別: 碩士
Master
系所名稱: 光電工程研究所
Graduate Institute of Electro-Optical Engineering
論文出版年: 2009
畢業學年度: 97
語文別: 中文
論文頁數: 87
中文關鍵詞: 相變化材料靜態測試儀原子力顯微儀濕式蝕刻
英文關鍵詞: phase-change material, optical pump-probe system, atomic force microscopy, wet-etching
論文種類: 學術論文
相關次數: 點閱:194下載:0
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  • 本論文主旨在於研究不同膜層結構的相變化材料對鹼性溶液之蝕刻特性。利用萊卡光譜儀與表面輪廓儀來量測薄膜蝕刻後之光學與物理性質,並使用波長658nm之紅光雷射泵探系統(靜態測試儀)製作樣品。經過溶液蝕刻後,由原子力顯微儀(Atomic Force Microscope)對記錄點進行掃探所得到的表面形貌資訊,來研究不同膜層結構相變化薄膜之記錄點型態。並可充分且完整的了解相變化材料在光熱作用與濕式蝕刻下之變化。將來可應用於奈米微影技術,用以取代昂貴的半導體製程技術。

    In this thesis, we study the selective etching properties between as-deposited and crystalline phase of Ge2Sb2Te5 alloy film carried out with an alkaline etching solution of NaOH. The optical and physical properties of the thin films before and after etching are measured by Lycra spectrometer and surface profile. And we use the optical pump-probe system and atomic force microscopy (AFM) to manufacture the sample and investigate the topographic change. Through the complete experiments, results showed the etching of the crystalline film is fast than the as-deposited Ge2Sb2Te5 film. The disordered amorphous region acts as an resistant mask. A novel high throughput and low cost nanolithography method is developed by the Ge2Sb2Te5 phase-change masking thin films. The special Opto-thermal effect of phase-change material can be applied to the Nanolithography in the future.

    第一章、 緒論 1 1-1 前言 1 1-2 相變化材料 1 1-2-1 相變化過程 1 1-2-2 結晶過程類型 4 1-2-3 相變化材料演進 5 1-2-4 相變化材料Ge2Sb2Te5結構 6 第二章、 儀器設備及基本原理 12 2-1 前言 12 2-2 四靶濺鍍機 12 2-2-1 儀器簡介及用途 12 2-2-2 樣品製作參數 14 2-3 靜態測試儀 15 2-3-1 儀器簡介及用途 15 2-3-2 儀器架構與元件介紹 15 2-3-2-1 儀器架構 15 2-3-2-2 雷射光泵探系統主要光學元件介紹(依照光路順序排列) 17 2-3-2-3 校正工作(calibration) 21 2-3-2-4 雷射光初始化樣品的方法 21 2-3-2-5 光學寫入實驗流程 22 2-4 原子力顯微鏡 25 2-4-1 儀器簡介及用途 25 2-4-2 工作操作模式 26 第三章、 樣品製作與實驗結果討論分析 28 3-1 前言.. 28 3-1-1 實驗樣品參數 28 3-1-2 實驗結果 30 3-1-2-1 相變化薄膜之蝕刻率研究 30 3-1-2-2 初鍍態相變化薄膜實驗結果 35 3-1-2-2-1 實驗流程 35 3-1-2-2-2 記錄點分類 (CCD影像圖) 36 3-1-2-2-3 蝕刻前後AFM表面形貌比較 39 3-1-2-2-3 改變蝕刻條件實驗 48 3-1-2-2-4 結論 49 3-1-2-3 結晶態相變化薄膜實驗結果 51 3-1-2-3-1 記錄點分類 (CCD影像圖) 51 3-1-2-3-2 蝕刻前後AFM表面形貌比較 53 3-1-2-3-3 結論 59 3-1-2-4 初鍍態相變化薄膜加入銀膜之實驗結果 (CCD影像圖) 61 3-1-2-4-1 記錄點分類 61 3-1-2-4-2 蝕刻前後AFM表面形貌比較 62 3-1-2-4-3 結論 69 3-1-2-5 結晶態相變化薄膜加入銀膜之實驗結果 (CCD影像圖) 71 3-1-2-5-1 記錄點分類 (CCD影像圖) 71 3-1-2-5-2 蝕刻前後AFM表面形貌比較 72 3-1-2-3-3 結論 78 第四章、結論 80 參考文獻 .................................................82

    [1]L.E雷克著、黃畇譯,“統計物理現代教程上冊”, 北京大學出版社 (1983).
    [2]過冷溶液http://tw.knowledge.yahoo.com/question/?qid=1405121607426
    [3]R. Zallen, “The Physics of Amorpous Solids”, John Wiley and Sons, New York (1983).
    [4]T. Ohta, “Phase-Change Optical Memory Promotes the DVD Optical Disk”, J. Opt. Adv. Mat. 3, 609 (2001).
    [5]徐豪汶,“鍺銻碲相變化奈米薄膜之奈米尺度光熱性質的究”,碩士論文, 中央物理研究所 (2006).
    [6]G. F. Zhou, H. J. Borg, J. C. N. Rijpers, and M. Lankhorst, “Crystallization behavior of phase change materials: comparison between nucleation- and growth-dominated crystallization”, Optical Data Storage, 2000. Conference Digest, (2000).
    [7]Benno Tieke, Martijn Dekker, Nicola Pfeffer, Roel van Woudenberg, Guo-Fu Zhou, and Igolt P. D. Ubbens, “High data-rate phase-change media for the digital video recording system”, Jpn. J. Appl. Phys. 39, 762 (2000).
    [8]S. R. Ovshinsky, “Reversible electrical switching phenomena in disordered structures”, Phys. Rev. Lett. 21, 1450 (1968).
    [9]J.Feinleib, J.deNeufville, S.C. Moss, and S.R.Ovshisky, “Rapid reversible light-induced crystallization of amorphous semiconductors”, Appl. Phys. Lett. 18, 254 (1971).
    [10]相變化光碟片http://www.mse.nthu.edu.tw/~lhchou/wel02a2.html
    [11]J. H. Coombs, A. P. J. M. Jongenelis, W. van Es-Spiekman, and B. A. J. Jacobs, “Laser-induced crystallization phenomena in GeTe-based alloys. I. Characterization of nucleation and growth”, J. Appl. Phys. 78, 4096 (1995).
    [12]N. Kh. Abrikosov and G. T. Danilova-Dobryakova, Izv. Akad. Nauk SSSR, Neorg. Mater. 1, 204 (1965).
    [13]R. Kojima, S. Okabayashi, T. Kashihara, K. Horai, and N. Yamada, Proc. Symp. on Phase-Change Recording ¬8, 35 (1996) (in Japanese).
    [14]Noboru Yamada et al., “Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memory”, J. Appl. Phys. 69, 2849 (1991).
    [15]Noboru Yamada, Toshiyuki Matsunaga, “Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory”, J. Appl. Phys. 88, 7020 (2000).
    [16]Noboru Yamada, Eiji Ohno, Kenichi Nishiuchi, Masatoshi Takao, and Nobuo Akahira, “Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memory”, J. Appl. Phys. 69, 2849 (1991).
    [17]I. Friedrich et al., “Structure transforms of Ge2Sb2Te5 films studied by electrical resistance measurements”, J. Appl. Phys. 87, 4130 (2000).
    [18]郭博成,“添加元素對Ge2Sb2Te5相變化光碟記錄之光學性質的影響”,台灣大學材料研究所 (2002)
    [19]Toshiyuki Matsunaga, Noboru Yamada, and Yoshiki Kubot, “Structures of stable and metastable Ge2Sb2Te5, an intermetallic compound in GeTe-Sb2Te3 pseudo-binary systems”, Acta Cryst. B 60, 685 (2004).
    [20]Zhimei Sun, Jian Zhou, and Rajeev Ahuja, “Structures of phase change materials for data storage”, PRL 96, 055507 (2006).
    [21]K. Kohary, V. M. Burlakov, and D. G. Pettifor, “Modeling the amorphous-to-to-crystalline phase change transformation in network materials”, Phys. Rev. B 71, 235309 (2005).
    [22]Zhimei Sun, Jian Zhou, and Rajeev Ahuja, “Unique Melting Behavior in Phase-Change Materials for Rewritable Data Storage”, PRL 98, 055505 (2007).
    [23]V.A. Kolobov, P. Fons, A. I. Frenkel, A. Ankudinov, J. Tominaga, and T. Uruga,” Understanding the phase-change mechanism of rewritable optical media”, Nat. Mater. 3, 703 (2004).
    [24]WeLnic et al., ”Unravelling the interplay of local structure and physical properties in phase-change materials”, Nat. Mater. 5, 56 (2006).
    [25]V.Weidenhof et al., “Laser induced crystallization of amorphous Ge2Sb2Te5 Films”, J. Appl. Phys. 89, 3168 (2001).
    [26]Chubing Peng and M. Mansuripur, “Measurement of the thermal coefficients of rewritable phase-change optical recording media”, Appl. Opt. 39, 2374 (2000).
    [27]Pramod K Khulbe et al., “Crystallization behavior of as-deposited, melt quenched, and primed amorphous states of Ge2Sb2.3Te5 films”, J. Appl. Phys. 88, 3926 (2000).
    [28]Toshihisa Nonaka et al., “Crystal structure of GeTe and Ge2Sb2Tb5 meta-stable phase”, Thin Solid Films 370, 258-261 (2000).
    [29]Walter K. Njoroge et al., “Density changes upon crystallization of Ge2Sb2.04Te4.74 films”, J. Vac. Sci. Technol. A 20(1), 230 (200).
    [30]Chubing Peng and M. Mansuripur, “Measurement of the thermal conductivity of erasable phase-change optical recording media”, Appl. Opt. 39, 2374 (2000).
    [31]M. Chen, K. A. Rubin, V. Marrello, U. G. Gerber, V. B. Jipson, “Reversibility and Stability of Tellurium Alloys for Optical Data Storage Applications”, Appl. Phys. Lett. 46, 734 (1985).
    [32]M. Okada, S. Ohkubo, T. Ide, M. Murahata, H. Honda and T. Matsui, “High-density phase-change optical disk with a Si reflective layer”, Proc. SPIE 2514, 329 (1995).
    [33]Noboru Yamada, Mayumi Otoba, Katsumi Kawahara, Naoyasu Miyagawa, Hiroyuki Ohta, Nobuo Akahira and Toshiyuki Matsunaga, “Phase-change optical disk having a nitride interface layer”, Jpn. J. Appl. Phys. 37, 2104(1998).
    [34]高宗聖,“氧化鋅複合材料奈米薄膜之近場超解析結構”,碩士論文,台灣大學物理學研究所 (2004).
    [35]Pramod K. Khulbe, Xiaodong Xun, and M. Mansuripur, “Crystallization and amorphization studies of a Ge2Sb2.3Te5 thin-film sample under pulsed laser irradiation,” Appl. Opt. 39, 2359 (2000).
    [36]Xiaodong Xun, James K. Erwin, Warren Bletscher, Jinhan Choi, Senta Kallenbach, and Masud Mansuripur, “Crystallization Studies on Phase-Change Optical Recording Media by Use of a Two-Dimensional Periodic Mark Array,” Appl. Opt. 40, 6535 (2002).
    [37]Pramod K. Khulbe, Terril Hurst, Michikazu Horie, and Masud Mansuripur, “Crystallization Behavior of Ge-Doped Eutectic Sb70Te30 Films in Optical Disks,” Appl. Opt. 41, 6220 (2002).
    [38]J. H. Coombs, A. P. J. M. Jongenelis, W. van Es-Spiekman, and B. A. J. Jacobs, “Laser-induced crystallization phenomena in GeTe-based alloys. I. Characterization of nucleation and growth,” J. Appl. Phys. 78, 4096 (1995).
    [39]Y.-C. Hsien, M. Mansuripur, J. Volkmer, and A. Brewen, “Measurement of the thermal coefficients of nonreversible phase-change optical recording films,” Appl. Opt. 36, 886 (1997).
    [40]Gerd M. Fischer, Briian Medower, Robert Revay, and Masud Mansuripur, “Thermal properties and crystallization dynamics of a phase-change alloy of write-once optical data storage,” Appl. Opt. 41, 1998 (2002).
    [41]Masud Mansuripur, J. Kevin Erwin , Warren Bletscher, Pramod Khulbe, Kayvan Sadeghi, Xiaodong Xun, Anurag Gupta, and Sergio Bj. Mendes, “Static tester for characterization of phase-change, dye-polymer, and magneto-optical media for optical data storage,” Appl. Opt. 38, 7095 (1999).
    [42]劉宏威,“相變化記錄層與奈米近場光學多層膜結構之光熱反應研究”,碩士論文,台灣大學物理學研究所 (2005)
    [43]Mortimer Abramowitz, “Microscope: Basics and Beyond,” Olympus Microscopy Resource Center (2003).
    [44]二分之一波片http://www2.nsysu.edu.tw/optics/polarizer/polarization.html
    [45]“MediaTest-I_manual”, Toptica Phonetic AG (2003).
    [46]祁子年,“近場光學顯微術及其應用”,碩士論文,中正大學物理學研究所 (1996)
    [47] Jin-Hong Kim, “Effects of a metal layer on selective etching of a Ge5Sb75Te20 phase-change film”, Semicond. Sci. Technol. 23 (2008).
    [48] Guangjun Zhang, Donghong Gu, Fuxi Gan, Xiongwei Jiang, Qingxi Chen, “Femtosecond laser-induced crystallization in amorphous Ge2Sb2Te5 films” Thin Solid Films 474 (2005).
    [49] Tetsuji Mori, “New Approach to Fabrication of Minute Columnar
    and Ring Patterns with ZnS, SiO2, and Zn”, Jpn. J. Appl. Phys. 48 (2009).

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