我們研究離子佈植與摻雜對氮化鎵和氧化鋅薄膜光譜性質的影響。實驗樣品包含以分子束磊晶法在藍寶石基板成長厚度約2.7 μm的氮化鎵薄膜，並於其上佈植不同濃度稀土離子 (釤離子、銪離子、釓離子及鈥離子)，另使用射頻磁控濺鍍，並通入不同氧和氮流量，成長膜厚約390 nm之氧化鋅薄膜。
首先，我們量測樣品的拉曼散射光譜，氮化鎵薄膜顯示3個拉曼峰，其頻率位置為142 cm-1、566 cm-1及733 cm-1，分別為E2(low)、E2(high) 及A1(LO) 對稱性；氧化鋅薄膜顯示2個拉曼峰，其頻率位置為99 cm-1和438 cm-1，分別為E2(low) 和E2(high) 對稱性。此外，氮化鎵薄膜之截面拉曼散射光譜顯示5個拉曼峰，其頻率位置為142 cm-1、531 cm-1、558 cm-1、567 cm-1及740 cm-1，分別屬於E2(low)、A1(TO)、E1(TO)、E2(high) 與E1(LO)。由於晶格不匹配及熱膨脹係數的關係，隨著愈靠近基板，所有拉曼特徵峰皆有藍移的現象。
我們發現不論正面或截面氮化鎵薄膜的拉曼散射光譜，隨著佈植離子濃度增加，氮化鎵薄膜新增289 cm-1、361 cm-1及661 cm-1拉曼峰，這些振動模與佈植離子造成氮化鎵薄膜的缺陷有關，但卻與佈植離子種類無關，且缺陷相關拉曼峰愈接近基板界面，其強度降低。另隨著通入氮流量的增加，我們發現氧化鋅薄膜新增275 cm-1、510 cm-1、586 cm-1、及645 cm-1拉曼峰，其為通入氮氣造成晶格間隙中有鋅、氧 (Zni、Oi) 存在，並與氧氮錯位 (ZnO)，形成複合型缺陷 (Zni-Oi及Zni-Ni)，這些缺陷在通入氧流量的氧化鋅薄膜並未被發現。
其次，我們量測樣品的穿透光譜與橢圓偏振光譜，隨著佈植離子濃度增加及通入氮流量變大，吸收能譜的能帶尾巴愈加明顯，氮化鎵薄膜的折射率極値呈減緩趨勢。佈植離子氮化鎵薄膜與通入氮流量氧化鋅薄膜的直接能隙值都比未佈植或未摻雜還小 (約為3.38 eV及3.26 eV)，我們認為此乃能隙間的雜質帶或晶格結構扭曲所致。
最後，隨著佈植稀土離子濃度的增加，氮化鎵薄膜的鐵磁性變明顯，稀土離子除了本身的未配位電子提供磁矩外，薄膜缺陷 (如：鎵空缺或氮空缺) 亦可能提供磁矩，我們發現在佈植稀土離子後，薄膜的鐵磁性與缺陷都增加，這暗指薄膜的有效磁矩與缺陷有緊密關聯性。

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