本實驗之矽量子點以低壓化學沉積氣相系統LPCVD（low pressure chemical vapor deposition）製備，利用調控制SiH2Cl2 及NH3兩種氣體流量成長氮化矽之薄膜，並固定其厚度，再單純通以SiH2Cl2調控沉積時間成長不同大小之三明治結構矽量子點，並由穿透式電子顯微鏡TEM（transmission electron microscopy）影像證實不同沉積時間之下量子點存在於材料中，並後續將材料於1100˚C常壓氮氣下退火2小時。進而利用低略角X光繞射GIXRD （grazing incidence X-Ray diffraction）鑑定材料中退火前後之結晶晶相並利用Scherrer formula推算不同結晶相之平均量子點晶粒大小。再者利用Raman光譜鑑定其退火前後材料中是否有奈米結晶存在。並利用光致螢光光譜PL（photoluminescence）觀測量子點退火前後發光波段及利用Park經驗公式推算可能含有之量子點大小，並利用1931 CIE color space鑑別材料之混和色光。
最後將基板上之量子點材料切割製作成電致螢光EL（electroluminescence） 發光元件並利用積分球量測其退火前後之元件EL光譜圖發光波段及發光強度且亦利用1931 CIE color space鑑別元件所發出之混和色光座標。

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