本次實驗的內容主要在探討，成長於二氧化矽(SiO2)基板上的二硫化鉬(MoS2)與C60組合而成的樣品，在綠光雷射下的拉曼效應(Raman effect)以及光致發光（Photoluminescence PL）的結果，以及其表面形貌；並且藉由改變不同雷射功率，觀察C60的脫附現象(desorption)。
樣品的製備為利用化學氣象沉積(CVD)在二氧化矽(SiO2)基板上沉積出二硫化鉬(MoS2)薄膜，再利用超高真空鍍膜技術將C60鍍上；利用原子力顯微鏡(AFM)與拉曼效應、光致發光光譜分析對C60/MoS2樣品的表面結構以及半導體性質進行量測。實驗結果發現，改變不同的雷射功率，以及照射時間，可以對C60的光致發光特徵峰造成影響，進而探討雷射對C60造成的脫附現象；實驗中發現使用波長532 nm功率 5 mW的雷射以1分鐘與6分鐘的照射時間，分別可以使樣品造成
C60的PL峰值以及MoS2的PL峰值的下降，並利用此現象對C60/MoS2異質結構進行微觀圖形的雕製。

In this study, we deposited C60 films on MoS2 flakes, and investigated the morphology, Raman spectrum and photoluminescence spectrum to study the laser-induced desorption effect on the C60/MoS2 heterostructure. The MoS2 flakes were fabricated on SiO2/Si(100) substrates by using chemical vapor deposition, and the C60 thin film was deposited on the MoS2 flakes by e-beam evaporation.
By atomic force microscope We found the relationship between the laser power and the surface height of both MoS2 flakes and C60/MoS2 heterostructure. Furthermore, we found that a hole formed on the C60 surface by laser-induced desorption effect. In the photoluminescence spectroscopy analysis, the characteristic peak of C60 also decreased by Increasing the laser irradiation time.
Finally, through using laser-induced desorption effect, we chose 532 nm laser with power of 5 mW( irradiation time is 1 and 6 min), And we can make the patterns with 4 kinds of photoluminescence waveform on the MoS2/C60 heterostructure.

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