摘要
在本論文中，是利用近場光學能夠提高解析程度的方法來觀察面射型半導體雷射元件的發光模態變化。使用近場光學顯微術，可以幫助我們瞭解在細微結構下的發光變化情形，同時還可以用來偵測區域性發光光譜。面射型半導體雷射元件是近年來受到重視的通訊用發光光源。因此在實驗中，將針對離子佈植與氧化限制型不同製程的面射型半導體雷射元件，分別量測和觀察其近場發光情形與模態的變化。同時還將以近場光譜解析量測來探討在近場下的發光影像與元件結構特性的關係。

Abstract
In this thesis, the lasing modes of the surface emitting laser diode have been investigated by using near-field optics (NFO) to improve the resolution. NFO microscopy not only could help us realize the subtle distinction between different lasing patterns, but also could detect the local emitting spectra. Surface emitting laser diode is the light source which recently becomes vitally important for optocommunication. Therefore, the different types devices fabricated by ion-implanted and oxide-confinement VCSELs in our experiments were observed their lasing conditions and mode variations in the near field respectively. Moreover, we also discuss about the relations between near-field optical images and architecture of the two devices by spectrally-resolved near-field investigation.

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