隨著全球進入5G通訊的時代，毫米波的研究和發展越來越重要。其中毫米波所擁有的優勢為高速傳輸速率、較寬的頻寬和較低的延遲，因此，毫米波的運用變成眾人的發展目標。本論文將分別使用90-nm互補式金屬氧化物半導體製程和65-nm互補式金屬氧化物半導體製程，來實現主頻為28 GHz的寬頻增益放大器與寬頻功率放大器。
第一個電路為28 GHz寬頻增益放大器，使用兩極皆為疊接組態增加整體的增益，同時使用第一級電流控制架構和基極偏壓技術，來達成較寬高的可變增益範圍，在可變增益範圍維持的前提下，使用共振腔及相位反轉技術達到低相位差。在這顆電路中，實現27 GHz～40 GHz的頻寬，增益皆大於16 dB，可變增益範圍皆可達到6.7，而相位差則低於5度。
第二個電路為28 GHz寬頻功率放大器，利用兩級串接的方法增加電路的增益，同時利用變壓器來當作匹配網路和功率結合的元件，第二級放大器採用F類來提高效率。當操作頻率為28GHz時，功率增益(Power gain)為25.588 dB，飽和輸出功率(Psat)為16.558 dBm，最大功率附加效率Peak PAE約為44.821 %，1-dB增益壓縮點之輸出功率(OP1dB)約為12.941 dBm，整體靜態電流約為15.64 mA，功率消耗為18.768 mW。

As the world enters the 5G communication, the research and development of millimeter-wave technologies have become increasingly important. A millimeter-wave band offers advantages such as high data-rate, wider bandwidth, and lower latency, making it a prominent focus of development. In this paper, we use 90-nm and 65-nm CMOS process to design two amplifiers centered at the frequency of 28-GHz, They are a broadband variable gain amplifier and broadband power amplifier.
The first circuit is a 28-GHz broadband variable gain amplifier. In this circuit, we designed with a cascode topology in both stages to increase gain. The current streeing is added in first satge and used body bias to achieve a wide variable gain range. Additionally, LC resonant and phase inversion are utilized to minimize phase variation while maintaining the variable gain range. The circuit achieve a bandwidth from 27-GHz to 40-GHz, with the gain of more than 16 dB, and a variable gain range greater than 6.7. Finally, the phase difference is below 5 degrees.
The second circuit is a 28-GHz broadband power amplifier. We designed with two-stage to increase the gain in this circuit. The transformer plays a role in matching network and power combining. The second-stage is class-F amplifier to improve efficiency. When operating at 28GHz, the power gain is 25.588 dB, the saturated output power is 16.558 dBm, the peak PAE is 44.821%, and the output power at 1-dB gain compression point is 12.941 dBm. The current is 15.64 mA, and the power consumption is 18.768 mW.

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