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研究生：	蔡振鏞 Chen-Yung Tsai
論文名稱：	以直流磁控濺鍍氮化鈦薄膜於AZ31鎂合金之最適化製程 The Optimum Processes of TiN Films Deposited on AZ31 Magnesium Alloys by DC Magnetron Sputtering
指導教授：	程金保 Cheng, Chin-Pao
學位類別：	碩士 Master
系所名稱：	工業教育學系 Department of Industrial Education
論文出版年：	2005
畢業學年度：	93
語文別：	中文
論文頁數：	102
中文關鍵詞：	氮化鈦、濺鍍、鎂合金
英文關鍵詞：	titanium nitride, sputter, magnesium alloy
論文種類：	學術論文
相關次數：	點閱：545 下載：37
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鎂合金的密度為1.74 g/cm3，為輕金屬結構最輕者。然而，鎂有高腐蝕電流的趨勢，在工業上鎂則有高溫低強度及較差抗磨損能力之不利條件。由過去的研究結果顯示，經由物理汽相沉積(PVD)技術沉積薄膜可以克服上述缺點，加上氮化鈦具有高硬度、耐磨耗、抗腐蝕等特點，所以本研究係以直流式非平衡磁控濺鍍系統，將氮化鈦薄膜沉積在AZ31鎂合金上。本實驗採用L9直交表所配置的參數有基板溫度、靶材電流、負偏壓、及試片至靶材的距離等，製備後的試片則以X光繞射檢測薄膜晶體結構，以SEM觀察薄膜橫斷面形貌，以α-step量測薄膜厚度，以維克氏硬度儀量測硬度，以原子力顯微鏡量測表面粗糙度，以洛氏壓痕試驗及刮痕試驗來鑑定薄膜附著性。

從實驗結果顯示：氮化鈦薄膜的優選方向為(111)、硬度值分佈由1242.99至1761.74 Hv，粗糙度值分佈由1.526至4.352 nm，在洛氏壓痕實驗得知氮化鈦薄膜沉積在鎂合金上有不錯的附著性，以試片S5為例進行刮痕試驗，得其附著力為10 N。同時，本研究以田口方法針對薄膜沉積速率、硬度及表面粗糙度等品質特性進行分析，得其沉積速率最適化參數為：基材溫度110℃、靶材電流0.7A、負偏壓50V、試片距離110mm；硬度最適化參數為：基板溫度110℃、靶材電流0.5A、負偏壓100V、試片距離150mm；表面粗糙度最適化參數為：基板溫度150℃、靶材電流0.5A、負偏壓50V、試片距離150mm。

Magnesium alloys is one of the lightest construction metals with a density of 1.74 g/cm3. However, Mg alloys has a high tendency to galvanic corrosion. Other disadvantages in industrial of Mg alloys are low strength at elevated temperatures and poor wear resistance. Based on the previous studies, the deposition of coatings via physical vapor deposition (PVD) technologies seems to overcome these drawbacks. Besides, TiN thin films have excellent hardness; good wear resistance, and high corrosion resistance. Therefore, this study to deposited titanium nitride (TiN) thin films on AZ31 magnesium alloys using DC unbalance magnetron (UBM) sputtering system. The parameters used L9 orthogonal array, including temperature of substrate, current of target, negative bias, and specimen-target distance. After deposition, the thin film structure was characterized by X-ray diffraction (XRD), and the cross-section was observed by scanning electron microscopy (SEM). The thickness of TiN films was measured by alpha-step. The hardness of thin film was measured by Vickers test. The roughness of thin film was determined by atomic force microscopy (AFM). The adhesion of thin film was measured by Rock-Well indentation test and scratch test.

The results showed that TiN films has (111) preferred orientation. The hardness of those films is from 1242.99 to 1761.74 Hv. The roughness of those films is from 1.526 to 4.352 nm. And from Rock-Well indentation test showed the TiN films deposited on magnesium alloys has a good adhesion. Take S5 for example, it shows that the adhesion is about 10N on scratch test. At the same time, those thin films in order to find out the parameters of optimum conditions were analyzed by Taguchi method on quality characteristic like the deposition rate, hardness and roughness. From the statistical analysis, the optimum conditions for the maximum deposition rate are : temperature = 110℃, current = 0.7A, negative bias = 100V, and specimen-target distance = 110mm. The optimum conditions for the maximum hardness are : temperature = 110℃, current = 0.5A, negative bias = 100V, and specimen-target distance = 150mm. The optimum conditions for the minimum roughness are : temperature = 150℃, current = 0.5A, negative bias = 50V, and specimen-target distance = 150mm.

誌謝…………………………………………………………….. Ⅰ
中文摘要……………………………………………………….. Ⅱ
英文摘要……………………………………………………….. Ⅲ
總目錄………………………………………………………….. Ⅴ
圖目錄………………………………………………………….. Ⅸ
表目錄…………………………………………………………..ⅩⅡ

第一章  前言……………………………………………………..1
 1-1  研究動機…………………………………………………..1
 1-2  研究目的…………………………………………………..4

第二章  文獻回顧………………………………………………. 6
 2-1  磁控濺鍍技術……………………………………………. 6
  2-1-1  磁控濺鍍系統種類………………………………….. 6
  2-1-2  濺鍍原理…………………………………………….. 9
  2-1-3  反應性濺鍍………………………………………….. 9
  2-1-4  離子轟擊……………………………………………..11
 2-2  基礎電漿……………………………………………….. 13
  2-2-1  電漿基本性質………………………………………..14
  2-2-2  依熱力學分類………………………………………..14
  2-2-3  依氣體壓力分類……………………………………..15
  2-2-4  依氣體放電方式分類………………………………..16
  2-2-5  電漿反應式…………………………………………..19
  2-2-6  電漿顏色……………………………………………..20
  2-2-7  電漿表面處理效能…………………………………..21
 2-3  TiN薄膜…………………………………………………..22
  2-3-1  TiN性質及晶體結構………………………………….22
  2-3-2  薄膜成長過程………………………………………..23
  2-3-3  薄膜之結構模型……………………………………..24
 2-4  鎂合金…………………………………………………….26
  2-4-1  鎂合金分類…………………………………………..26
  2-4-2  鎂合金性質…………………………………………..27
  2-4-3  表面處理方式………………………………………..28
 2-5  田口品質工程…………………………………………….35
  2-5-1  田口基本原理………………………………………..36
  2-5-2  直交表………………………………………………..36
  2-5-3  訊躁比………………………………………………..37
  2-5-4  品質特性……………………………………………..38
  2-5-5  數據解析與確認實驗………………………………..39

第三章  實驗方法與步驟……………………………………..41
 3-1  濺鍍系統及實驗基材…………………………………….41
 3-2  實驗流程………………………………………………….44
 3-3  薄膜檢測與量測………………………………………….47
  3-3-1  薄膜結構檢測………………………………………..47
  3-3-2  膜厚量測……………………………………………..47
  3-3-3  橫斷面形貌觀察與成份檢測………………………..48
  3-3-4  粗糙度量測及3D表面形貌觀察……………………..49
  3-3-5  附著性檢測…………………………………………..51
  3-3-6  微硬度量測…………………………………………..52
 3-4  田口品質特性分析……………………………………….54

第四章  實驗結果與討論……………………………………….55
 4-1  薄膜檢測與量測結果…………………………………….55
  4-1-1  晶體結構檢測………………………………………..55
  4-1-2  膜厚量測……………………………………………..58
  4-1-3  橫斷面形貌觀察及成份分析………………………..61
  4-1-4  粗糙度量測及3D表面形貌觀察……………………..63
  4-1-5  微硬度量測…………………………………………..67
  4-1-6  附著性檢測…………………………………………..68
 4-2  薄膜沉積速率分析……………………………………….72
  4-2-1  田口實驗分析………………………………………..72
  4-2-2  沉積速率與製程參數之關係………………………..73
  4-2-3  變異數分析…………………………………………..75
  4-2-4  製程參數對沉積速率的影響………………………..76
  4-2-5  確認實驗……………………………………………..78
 4-3  薄膜微硬度分析………………………………………….81
  4-3-1  田口實驗分析………………………………………..81
  4-3-2  微硬度與製程參數之關係…………………………..82
  4-3-3  變異數分析…………………………………………..83
  4-3-4  製程參數對微硬度的影響…………………………..84
  4-3-5  確認實驗……………………………………………..86
 4-4  薄膜粗糙度分析………………………………………….89
  4-4-1  田口實驗分析………………………………………..89
  4-4-2  粗糙度與製程參數之關係…………………………..90
  4-4-3  變異數分析…………………………………………..91
  4-4-4  製程參數對粗糙度的影響…………………………..93
  4-4-5  確認實驗……………………………………………..93

第五章  結論…………………………………………………….96

參考文獻………………………………………………………….98
                                

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