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研究生: 黃聘聘
Huang, Pin-Pin
論文名稱: 以覆蓋氣-液-固相方法合成釩摻雜之二硫化鉬薄膜
A New Vanadium Doping Strategy of MoS2 through Capping-Vapor-Liquid-Solid
指導教授: 陳貴賢
Chen, Kuei-Hsien
林麗瓊
Chen, Li-Chyong
口試委員: 陳貴賢 林麗瓊 陳家俊 邱博文
口試日期: 2021/07/21
學位類別: 碩士
Master
系所名稱: 化學系
Department of Chemistry
論文出版年: 2021
畢業學年度: 109
語文別: 中文
論文頁數: 93
中文關鍵詞: 二硫化鉬釩摻雜二硫化鉬氣-液-固相大面積薄膜
英文關鍵詞: MoS2 thin film, V-doped MoS2, vapor-liquid-solid, centimeter-scale
研究方法: 實驗設計法
DOI URL: http://doi.org/10.6345/NTNU202100784
論文種類: 學術論文
相關次數: 點閱:134下載:15
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  • 二維材料近年來被視為下一世代的半導體材料,有別於三維材料,
    二維材料能以單原子層結構穩定存在,並且具備良好的物性與電性,
    可縮小現有的場效電晶體體積,提高晶片效能;除此之外,二維材料
    也能做為新穎的替代能源材料,將二氧化碳轉化成碳氫化合物,並且
    可透過釩摻雜來提高催化效率,期望改善全球暖化問題。
    本實驗研究的二維材料為屬於過渡金屬二硫族化合物(TMDCs)中
    的二硫化鉬,並著重於合成釩摻雜之二硫化鉬的方法,二硫化鉬不僅
    可應用於光電元件,亦可做為觸媒材料,若想將二硫化鉬應用於工業
    上,則需要合成大面積且連續均勻的薄膜,故此研究使用創新的合成
    方法: 覆蓋氣-液-固態方法來製備釩參雜之二硫化鉬薄膜,首先在矽
    基板上沉積四層前驅物薄膜,依序為:三氧化鉬、五氧化二釩、氟化鈉、
    二氧化矽薄膜,二氧化矽薄膜做為覆蓋層及擴散膜,防止氧化釩蒸發
    消失跟控制氣體硫的擴散,對於釩摻雜是重要的一環,若沒有二氧化
    矽覆蓋層,釩將無法成功的摻雜進二硫化鉬中;在硫化過程中氧化鉬、
    氧化釩與氟化鈉先反應形成鹽類液體後,氣態硫再穿過二氧化矽覆蓋
    層來與鹽類液體反應,最後過飽和析出釩摻雜二硫化鉬薄膜;此方法
    因牽涉到鹽類液態反應,因此能合成高摻雜濃度的二硫化鉬薄膜。

    Transition metal dichalcogenides (TMDs) have attracted people’s
    attention due to their outstanding physical properties. Molybdenum
    disulfide (MoS 2 ) thin film has been particularly found unique applications
    in catalysis, optoelectronics, transistors, and energy storage. These
    applications demand a large-scale synthesis of MoS 2 thin film with uniform
    thickness and high crystallinity. Besides, dopants in two-dimensional
    dichalcogenides have a significant role in affecting electronic, mechanical,
    and interfacial properties. Controllable doping is desired for the intentional
    modification of such properties to enhance performance. Vanadium-doing
    could enhance MoS 2 conductivity and carrier concentration so that it can
    improve catalytic activity. In this report, a new capping vapor-liquid-solid
    (VLS) synthesis has been developed. Depositing MoO 3 , V 2 O 5 , NaF and
    SiO 2 on SiO 2 /Si wafer sequentially as a 4-layer precursor. Herein, SiO 2 acts
    as capping layer and diffusion membrane, which is critical for V-doping.
    During sulfurization, MoO 3 , V 2 O 5 and NaF will form Mo/V/Na salt liquid
    first. Then sulfur will diffuse through capping SiO 2 layer and dissolve in
    Na salt liquid. Finally, V-MoS 2 will oversaturated on the substrate. After
    that, HF etching process is used to remove capping SiO 2 layer and V-MoS 2
    will show on the centimeter-scale wafer.

    致謝 i 中文摘要 ii Abstract iii 目錄 iv 表目錄 viii 圖目錄 ix 第一章 緒論 1 1-1 前言 1 1-2 研究動機 2 第二章 文獻回顧 4 2-1 二維材料及TMDs介紹 4 2-2 二硫化鉬結構及特性 7 2-3 釩摻雜二硫化鉬介紹及應用 14 2-4 二硫化鉬合成方法 19 2-4-1 物理剝離法(Mechanical Exfoliation) 19 2-4-2 化學剝離法(Chemical Exfoliation) 20 2-4-3 常規化學氣相沉積法(Conventional Chemical Vapor Deposition) 20 2-4-4 兩步化學氣相沉積法(Two-step Chemical Vapor Deposition) 21 2-4-5 氣液固相合成法(Vapor-Liquid-Solid Growth) 22 2-5 釩摻雜二硫化鉬合成方法 24 2-6 覆蓋氣-液-固相合成法(Capping Vapor-Liquid-Solid) 26 2-7 實驗儀器介紹 28 2-7-1 電漿輔助原子層沉積法(Plasma Enhanced Atomic Layer Deposition,PEALD) 28 2-7-2 熱蒸鍍與電子束蒸鍍(Thermal Evaporation and E-beam Evaporation) 29 2-7-3 低壓化學氣相沉積法(Low Pressure Chemical Vapor Deposition,LPCVD) 31 2-8 量測儀器介紹: 32 2-8-1 光學顯微鏡(Optical microscope, OM) 32 2-8-2 拉曼光譜(Raman spectroscopy) 34 2-8-3 原子力顯微鏡(Atomic Force Microscope, AFM) 35 2-8-4 X射線光電子能譜儀(X-ray Photoelectron Spectroscopy, XPS) 37 2-8-5 能量色散X射線光譜儀(Energy Dispersive X-Ray Spectroscopy, EDS) 38 2-8-6 穿透式電子顯微鏡(Transmission Electron Microscope, TEM) 39 2-8-7 選區電子繞射(Selected Area Electron Diffraction, SAED) 41 第三章 實驗方法 42 3-1 實驗流程圖 42 3-2 基板前處理 44 3-3 電漿輔助原子層氣相沉積法(Plasma-Enhanced Atomic Layer Deposition, PEALD) 44 3-4 熱蒸鍍(Thermal Evaporation) 45 3-5 電子束蒸鍍(E-beam Evaporation) 45 3-6 低壓化學氣相沉積法(Low Pressure Chemical Vapor Deposition, LPCVD) 46 3-7 氫氟酸蝕刻(HF etching) 48 第四章 結果與討論 49 4-1 氣-液-固相法二硫化鉬與釩摻雜二硫化鉬 49 4-2 覆蓋氣-液-固相法二硫化鉬製程參數最佳化 55 4-2-1 氟化納厚度效應 56 4-2-2 二氧化矽厚度效應 58 4-2-3 三氧化鉬厚度效應 60 4-2-4 溫度效應 63 4-2-5 壓力效應 69 4-2-6 氬氣及氫氣載流氣體流場 70 4-2-7最佳化二硫化鉬薄膜分析 76 4-3 釩摻雜二硫化鉬薄膜 77 4-3-1釩摻雜二硫化鉬薄膜分析 77 第五章 結論 87 參考文獻 88

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