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研究生: 陳家弘
Chen, Jia-Hong
論文名稱: 鐵電電容式記憶體增強開關比之技術
Technology of on/off Ratio Enhancement for Ferroelectric Capacitive Memory
指導教授: 李敏鴻
Lee, Min-Hung
廖書賢
Liao, Shu-Hsien
口試委員: 李敏鴻
Lee, Min-Hung
廖書賢
Liao, Shu-Hsien
蘇彬
Su Pin
口試日期: 2024/07/19
學位類別: 碩士
Master
系所名稱: 光電工程研究所
Graduate Institute of Electro-Optical Engineering
論文出版年: 2024
畢業學年度: 112
語文別: 中文
論文頁數: 47
中文關鍵詞: SOI雙層HZO鐵電電容式記憶體
英文關鍵詞: SOI, double-HZO, ferroelectric capacitive memory
研究方法: 實驗設計法主題分析
DOI URL: http://doi.org/10.6345/NTNU202401733
論文種類: 學術論文
相關次數: 點閱:52下載:0
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  • 鐵電記憶體(Ferroelectric Memory)是一種基於鐵電材料特性的非揮發性記憶體技術。鐵電材料具有自發極化的特性,即在沒有外加電場的情況下,材料內部會形成電偶極,並且這種極化可以被外加電場反轉,當施加一個電場時,鐵電材料內部的電偶極會隨電場方向翻轉,形成兩種穩定狀態,分別代表二進制的「1」和「0」,這種特性使得鐵電材料成為儲存訊號的理想材料。而鐵電電容式記憶體(Ferroelectric Capacitive Memory,FCM)包含在其中。
    此次研究首次展示具有SOI(Silicon-On-Insulator)基板和雙層HfZrO2(Double HZO,DHZO)的鐵電電容式記憶體其電容的開關比(Capacitive on/off Ratio,CHCS/CLCS)超過500倍。這一比率是FCM中的關鍵參數,表示記憶體可靠的儲存和檢索數據的能力。由於SOI在垂直方向上的空間限制,使得調控的空乏區域能夠在橫向方向上擴張以減少CLCS;此外,由於DHZO中高正交相(orthorhombic phase,o-phase)的比例,進一步增強CHCS,實現基於低電壓的飽和電容。對於DHZO-SOI FCM,實驗展示卓越的非破壞性讀取操作(Nondestructive Read Operation,NDRO),元件和讀取方案的操作週期均大於109次,並且在多階操作的4種狀態相比單層HfZrO2(Single HZO,SHZO)-SOI顯示錯誤率(Error Rates,ER)的改善。此技術包括DHZO和SOI的FCM是一個有前途的概念,具有潛在的非揮發性記憶體(Non-Volatile Memory,NVM)應用。

    Ferroelectric memory is a type of non-volatile memory technology based on the properties of ferroelectric materials. Ferroelectric materials possess spontaneous polarization, meaning that in the absence of an external electric field, electric dipoles form within the material. This polarization can be reversed by an external electric field. When an electric field is applied, the electric dipoles inside the ferroelectric material align with the direction of the field, creating two stable states representing the binary "1" and "0". This characteristic makes ferroelectric materials ideal for storing information. Ferroelectric capacitive memory is included within this category.
    For the first time, we have demonstrated a CHCS/CLCS ratio greater than 500× for a ferroelectric capacitive memory with an SOI substrate and double-HfZrO2 (DHZO). This ratio is a crucial parameter in FCM as it indicates the ability of the memory to store and retrieve data reliably. The modulated depletion region could be expanded laterally due to the spatial limitations in the vertical direction by the SOI to reduce CLCS; moreover, a low-voltage-based saturation capacitance by a high orthorhombic phase (o-phase) fraction of DHZO further enhanced CHCS. For DHZO-SOI FCM, the outstanding nondestructive read operation (NDRO) was experimentally exhibited with >10⁹ cycles by both devices and readout scheme, and the multilevel operation with 4-state also showed error-rate improvement compared to that of SHZO-SOI. The proposed technique involving DHZO and SOI for FCM is a promising concept and has potential NVM applications.

    第1章 緒論1 1-1 鐵電電容式記憶體簡介1 1-2 鐵電電容式記憶體近年發表的相關論4 1-2-1 MFM型鐵電電容式記憶體4 1-2-2 MFS型鐵電電容式記憶體10 1-2-3 MFS-FET型鐵電電容式記憶體14 1-3 本論文架構20 第2章 鐵電電容式記憶體製程21 2-1 簡介21 2-2 製作雙層HZO結構之目的21 2-3 三種不同鐵電電容式記憶體製程流程圖24 2-4 結構及材料分析25 2-5 結果討論26 第3章 鐵電電容式記憶體之基礎特性27 3-1 簡介27 3-2 透過SOI基板之FCM提高CHCS/CLCS比率27 3-3 結果討論31 第4章 鐵電電容式記憶體之性能表現32 4-1 簡介32 4-2 FCM之脈衝寫入和抹除33 4-3 FCM之數據保存能力(Retention)35 4-4 FCM之耐久性(Endurance)36 4-5 FCM之多階操作(Multi-Level Cell)38 4-6 FCM之深度學習(Deep Learning)39 4-7 FCM之背板加壓40 4-8 FCM之電路讀取41 4-9 結果討論41 第5章 總結與未來展望42 5-1 總結42 5-2 未來工作43 References44 Publications47 期刊論文47 研討會論文47

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