本研究利用超快雷射製程技術(Ultrafast laser processing technique)進行微結構(Microstructures)之熱元件(Heating device)製作及其特性之探討，以應用於氣體檢測(Gas detection)。在本研究中會使用超快雷射直寫技術分別於石墨烯(Graphene)/聚醯亞胺(Polyimide, PI)基材及奈米銀(Silver nanoparticles, AgNPs)/石墨烯/PI基材進行雷射測試，固定重複率為300 kHz、加工次數3次下，在振鏡掃描速度為500 mm/s及雷射能量密度為2.45 J/cm2，完成薄膜製程及元件製作，並依此參數製作不同寬度熱檢測元件。研究顯示在相同寬度5 mm下，石墨烯/PI基板給予功率6.10 W時，最高溫約134 ℃；奈米銀/石墨烯/PI基板給予功率5.83 W時，最高溫約104 ℃。另外，在相同寬度6 mm下，石墨烯/PI基板給予功率為6.10 W時，最高溫約110 ℃；奈米銀/石墨烯/PI基板給予功率4.48 W時，最高溫約113 ℃。進一步本研究顯示在寬度6 mm之奈米銀/石墨烯/PI基材熱檢元件，能給予較少功率，產生出100 ℃以上溫度，且基材彎曲90 o時，溫度仍能維持在100 ℃以上。同時，本研究搭配設計所製作的指叉狀(Interdigitated)電極元件進行氣體量測，研究顯示在一氧化氮(Nitric oxide, NO)濃度為650 ppm時，該元件電阻值可從78 上升至85 ，氣體響應值約9 %，且氣體響應值會隨氣體濃度增加而上升。

This study proposes the ultrafast laser processing technique to form heating device with microstructures and investigate its characteristics for applying for gas detection. Herein, the ultrafast laser direct-writing technique can be used on graphene/polyimide (PI) and graphene/silver nanoparticles (AgNPs)/PI respectively to perform the tests. Under the fixed repetition rate set to 300 kHz with processing of 3 times, the thin-film process and device were be performed at the controlled scanning speed of the galvanometer and laser fluence, which can be 500 mm/s and 2.45 J/cm2, respectively. According to these parameters, the thermal sensing device with different width can be fabricated. The study revealed that under the width of 5 mm electrode for graphene/PI substrate was achieved the highest temperature of 134 oC when being given the power of 6.10 W. And then, the same design width for graphene/silver nanoparticles/PI substrate was achieved the highest temperature of 104 oC when being given the lowest power of 5.83 W. On the other hand, it can be seen that under the width of 6 mm for graphene/PI substrate was achieved the highest temperature of 110 oC when being given the power of 6.10 W. And then, the same design width for graphene/silver nanoparticles/PI substrate was achieved the highest temperature of 113 oC when being given the lowest power of 4.48 W. Furthermore, the experimental results demonstrated that the electrode structure with 6 mm width electrode on the graphene/nano-silver/PI substrate was the highest temperature over 100 oC with the lowest power, in which the temperature of its device substrate can still be maintained at 100 oC when it was bent at 90 o. Simultaneously, this study was used the interdigitated electrode structure for gas detection. The results showed that when the concentration of nitric oxide (NO) is 650 ppm, the resistance value of electrode-structure device can be raised from 78  to 85  (the gas response value wss approximately 9 %). The experimental results showed that the value of gas response will increase as the gas concentration increases.

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