人性化、行動化與個人化一直是電子產品的發展趨勢，因此具有容易維護、攜帶方便、觸感舒適、耗能低、可以自由捲曲等特點的多功能數位化電子產品將成為發展的主流，然而，傳統以「矽基板」與「玻璃基板」為主的電子技術已無法滿足這些需求，故在未來應用在可攜式消費性電子產品，朝向輕、薄、可撓曲的特性發展，因此開發出軟性高可靠度電晶體製程，實為關鍵之技術，軟性電子技術被譽為改變人類未來的重要技術之一。而本論文就是利用模擬軟體模擬各種不同的參數，並搭配各種不同狀況下的實際量測來得到並呈現TFT本身於撓曲狀態下的應力分佈與建立完整的電與力模型。
而未來 IC 設計上面，3D-ICs 的結構適合用於 IC 設計，可以減少製程面積。在 3D-ICs 的連續製程上，不用元件的連接線的製程，相較之下可以減少製程上的成本,根據平面顯示器的經驗，多晶矽薄膜電晶體有較低的製程溫度，在 3D-ICs 的結構上面，低溫有利於基底下的元件，不受溫度而改變。而本論文在 High-k 材料的選擇中，利用了HfO2，而HfO2在氧化層上的運用廣泛，原因是有高的介電質約為 25、耐熱性高、能隙大使做出來的元件特性更佳。

Humanity, mobility, and personalization have always been the trend of development regarding electronics. The features, such as the ease of maintenance, convenience of portability, comfort of touch, low degree of attrition, and ease of rolling, etc., will soon become the mainstream in the development of multi-functional electronics. However, the electronic techniques featuring traditional Si-wafer and glass substrate are not able to meet these requirements. With regard to this, the portable consumer electronics has a tendency to be light, thin, and bending. The development of high reliability of flexible transistor process is, therefore, one of the important techniques to influence the future. The purpose of this experiment is to simulate a variety of parameters with simulation software, with the mechanical measurement under different kinds of circumstances to both obtain and build the model. Moreover, concerning the design of IC, the structure of 3D-ICs is suitable for the design of IC, thus decreasing area. In the process of continuous manufacturing of 3D-ICs, the cost will be more likely to be reduced when it is operated without contact line. According to the experience of the Display, Poly-Si TFT holds much lower manufacturing temperature. For the structure of 3D-ICs, the cells in the base are not likely to transform due to the low temperature. Because of k-value is about 25, high endurance of heat, and wide bandgap, the property of cells works significantly better. Therefore, among the choice of High-k materials, this experiment adopted HfO2, which is widely used in oxide.

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