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研究生: 林思彤
Lin, Sih-Tong
論文名稱: 基於掌性鈣鈦礦的發光二極體
The Light-Emitting Diodes Based on Chiral Perovskite
指導教授: 趙宇強
Chao, Yu-Chiang
口試委員: 趙宇強
Chao, Yu-Chiang
駱芳鈺
Lo, Fang-Yuh
許經夌
Hsu, Ching-Ling
口試日期: 2024/07/22
學位類別: 碩士
Master
系所名稱: 物理學系
Department of Physics
論文出版年: 2024
畢業學年度: 112
語文別: 中文
論文頁數: 52
中文關鍵詞: 準二維鈣鈦礦掌性旋光自旋電子學發光二極體
英文關鍵詞: Quasi-2D Perovskite, Chirality, Optical rotation, Spintronics, Light-Emitting Diode
研究方法: 實驗設計法
DOI URL: http://doi.org/10.6345/NTNU202401186
論文種類: 學術論文
相關次數: 點閱:80下載:5
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  • 本篇研究旨在引入具有對映異構物特性之「掌性」有機長鏈分子R/S-MBA,在這個基礎之下合成準二維掌性鈣鈦礦R/S-(MBA)2(MA0.2Cs0.8)Pb2Br7作為主要研究目標,最後製成發光二極體後並探討其旋光特性。
    第一部份研究使用準二維掌性鈣鈦礦R/S-(MBA)2(MA0.2Cs0.8)Pb2Br7作為「發光層」或「掌性選擇層(有機螢光材料Superyellow(Super yellow light-emitting PPV copolymer)作為發光層)」,透過比較其左掌性或右掌性的旋光特性進行各項量測並探討其光電特性。在這項實驗中,我們發現掌性鈣鈦礦在做為發光層時電致發光無法表現出明確的旋光特性;但在做為掌性選擇層時能夠發揮良好的左旋或右旋之選擇性,使得電致發光能明確分辨出左旋光或右旋光。
    第二部份研究中,本文使用R-(MBA)2(MA0.2Cs0.8)Pb2Br7作為發光層並透過添加不同比例之3-(Decyldimethylammonio)­propane­sulfonate inner salt(Caprylyl sulfobetaine,SB3-10),成功地將元件之效率由0.767%提升至2.304%。其關鍵在於引入此穩定劑能夠與鈣鈦礦晶粒邊界上的陰、陽離子作用進而鈍化鈣鈦礦薄膜中晶粒的表面缺陷,達到改質的效果。

    This research aims to introduce the chiral organic long-chain molecule R/S-MBA with enantiomeric properties in order to synthesize the Quasi-2D chiral perovskite R/S-(MBA)2(MA0.2Cs0.8)Pb2Br7 as the main research target. We will then fabricate it into a light-emitting diode and explore its photoelectric properties.
    The first part of the research mainly focuses on using the Quasi-2D chiral perovskite R/S-(MBA)2(MA0.2Cs0.8)Pb2Br7 as the emission layer or as the chiral selective layer (with the organic fluorescent material Superyellow, a Super yellow light-emitting PPV copolymer, as the emission layer). By comparing the optical rotation characteristics, various measurements were made, and its photoelectric properties were discussed. In this experiment, we found that the electroluminescence of the chiral perovskite does not show clear optical rotation characteristics when used as the emission layer. However, it can exhibit good left-handed or right-handed selectivity when used as a chiral selective layer, thereby allowing electroluminescence to clearly distinguish between left circularly polarized light and right circularly polarized light.
    In the second part of the study, we used R-(MBA)2(MA0.2Cs0.8)Pb2Br7 as the emission layer and added different proportions of 3-(Decyldimethylammonio) propanesulfonate inner salt (SB3-10), successfully increasing the external quantum efficiency (EQE) from 0.767% to 2.304%. The key is that the introduction of this stabilizer can interact with anions and cations on the boundaries of perovskite grains to passivate the defects on the grain surface in the perovskite film, achieving surface modification.

    摘要 i Abstract ii 目錄 iii 表次 vi 圖次 vii 第一章、緒論 1 1.1 前言 1 1.2 文獻回顧 2 1.3 研究動機 3 第二章、基礎理論 4 2.1 鈣鈦礦材料 4 2.1.1 鈣鈦礦之結構 4 2.1.2 掌性鈣鈦礦 7 2.2 發光二極體(LED)結構 8 2.3 掌性誘導自旋選擇性 9 2.4 旋光特性與科頓效應 10 2.5 能帶理論 11 2.6 HOMO與LUMO 13 2.7 量子侷限效應 13 2.8 光致發光 14 2.9 電致發光 14 2.10 量子效率 14 第三章、實驗流程 16 3.1 實驗簡介 16 3.2 製程儀器與量測儀器介紹 16 3.2.1 製程儀器 16 3.2.2 量測儀器 17 3.3 前置作業 19 3.3.1 合成R/S-MBABr 19 3.3.2 蝕刻與基板清洗 20 3.4 掌性鈣鈦礦材料之穩態性量測 21 3.4.1 R/S-(MBA)2(MA0.2Cs0.8)Pb2Br7樣品配置 21 3.4.2 PL、CD、CPL、XRD量測 23 3.5 Superyellow之穩態性測試 25 3.5.1 Superyellow樣品配置 25 3.5.2 PL、CD、CPL量測 25 3.6 添加SB3-10之鈣鈦礦之穩態性量測 26 3.6.1 添加SB3-10之鈣鈦礦之樣品配置 26 3.6.2 PL、XRD量測 27 3.7 鈣鈦礦為選擇層之元件結構 28 3.7.1 陽極 28 3.7.2 電洞注入層 28 3.7.3 掌性選擇層 29 3.7.4 發光層 29 3.7.5 電子傳輸層 29 3.7.6 陰極 29 3.8 鈣鈦礦為發光層之元件結構 30 3.8.1 陽極 30 3.8.2 電洞注入層 30 3.8.3 鈣鈦礦發光層 30 3.8.4 電子傳輸層 30 3.8.5 陰極 30 3.9 添加SB3-10之鈣鈦礦元件結構 31 3.9.1 陽極 31 3.9.2 電洞注入層 31 3.9.3 發光層 31 3.9.4 電子傳輸層 31 3.9.5 陰極 31 3.10 鈣鈦礦為選擇層之元件製作 32 3.10.1 陽極&電洞注入層 32 3.10.2 掌性選擇層 32 3.10.3 發光層 32 3.10.4 電子傳輸層 32 3.10.5 陰極 32 3.11 鈣鈦礦為發光層之元件製作 34 3.11.1 陽極&電洞注入層 34 3.11.2 鈣鈦礦發光層 34 3.11.3 電子傳輸層 34 3.11.4 陰極 34 3.12 添加SB3-10之鈣鈦礦元件製作 35 3.12.1 陽極&電洞注入層 35 3.12.2 鈣鈦礦發光層 35 3.12.3 電子傳輸層 35 3.12.4 陰極 35 第四章、實驗結果與討論 36 4.1 掌性鈣鈦礦材料和Suepryellow之基本特性 36 4.1.1 掌性鈣鈦礦材料 36 4.1.2 Superyellow 40 4.2 掌性鈣鈦礦為發光層/選擇層之元件 41 4.2.1 掌性鈣鈦礦為發光層之元件 41 4.2.2 掌性鈣鈦礦為選擇層之元件 44 4.3 添加SB3-10之鈣鈦礦之基本特性 47 4.3.1 添加SB3-10之鈣鈦礦 47 4.4 添加SB3-10之鈣鈦礦元件 48 4.4.1 添加SB3-10之鈣鈦礦元件比較 48 第五章、結論 51 5.1 掌性鈣鈦礦為發光層/選擇層之元件 51 5.2 添加SB3-10之鈣鈦礦元件 51 參考文獻 52

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