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研究生： 顏辰洋
Chen-Yang, Yen
論文名稱： X波段低雜訊放大器與K/Ka波段功率放大器之設計
Design of X-band Low Noise Amplifiers Using 0.15-μm GaAs p-HEMT process and K-/Ka-band Power Amplifier Using 90-nm CMOS process
指導教授： 蔡政翰
Tsai, Jeng-Han
口試委員： 蔡政翰
Tsai, Jeng-Han
鍾杰穎
Zhong, Jie-Ying
林文傑
Lin, Wen-Jie
口試日期： 2024/07/23
學位類別： 碩士
Master
系所名稱： 電機工程學系
Department of Electrical Engineering
論文出版年： 2024
畢業學年度： 112
語文別： 中文
論文頁數： 118
中文關鍵詞： 互補式金屬氧化物半導體 、砷化鎵 、應變式異質接面高遷移率電晶體 、功率放大器 、低雜訊放大器 、X頻段 、K頻段 、Ka頻段
英文關鍵詞： strained heterojunction high mobility transistor, gallium arsenide, complementary metal oxide semiconductor, power amplifier, low noise amplifier, X-band, K-band, Ka-band
研究方法: 實驗設計法
DOI URL： http://doi.org/10.6345/NTNU202401477
論文種類： 學術論文
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    • 誌 謝 1 摘 要 2 ABSTRACT 3 目 錄 5 表 目 錄 8 圖 目 錄 9 第一章 緒論 15 1.1. 研究背景與動機 15 1.2. 文獻探討 16 1.2.1. 低雜訊放大器 16 1.2.2. 功率放大器 19 1.3. 研究成果 22 第二章 X波段低功耗低雜訊放大器介紹 23 2.1. 低雜訊放大器簡介 23 2.2. 電路設計 24 2.2.1. 電路架構 24 2.2.2. 電晶體尺寸和偏壓選擇 26 2.2.3. 單級設計 31 2.2.4. 偏壓電路設計 36 2.2.5. 低雜訊放大器第一版模擬結果 38 2.2.6. 低雜訊放大器第二版模擬結果 44 2.3.低雜訊放大器第一版量測結果 50 2.3.1. 低雜訊放大器第二版量測結果 56 2.3.2. 問題與討論 62 2.4. 結論 63 第三章 X波段二級低雜訊放大器介紹 65 3.1. 雙級設計 65 3.2. 電路設計與架構 66 3.3. 低雜訊放大器模擬結果 69 3.4. 低雜訊放大器量測結果 74 3.5.結論 80 第四章 K/Ka波段功率放大器介紹 82 4.1. 背景與動機 82 4.2. 電晶體尺寸與偏壓選擇 83 4.3. 電路設計與架構 85 4.3.1. 中和電路設計 85 4.3.2.電晶體佈局 87 4.3.3.操作Class B Load Pull功率放大器分析 90 4.3.4.輸出匹配網路設計 91 4.3.5.輸入匹配網路設計 95 4.3.6.功率放大器模擬結果 99 4.4. 功率放大器量測結果 104 4.4.1. 功率放大器大訊號量測結果 106 4.5. 結論 111 第五章 結論 113 參 考 文 獻 114 自 傳 118 學 術 成 就 118

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