研究生: |
張育杰 Chang, Yu-Chien |
---|---|
論文名稱: |
石墨烯插層對Co/Cu薄膜的磁特性影響研究 |
指導教授: |
蔡志申
Tsay, Jyh-Shen |
學位類別: |
碩士 Master |
系所名稱: |
物理學系 Department of Physics |
論文出版年: | 2016 |
畢業學年度: | 104 |
語文別: | 中文 |
論文頁數: | 112 |
中文關鍵詞: | 石墨烯 、磁光柯爾效應 、電鍍 、鈷 、銅(100) 、循環伏安法 |
英文關鍵詞: | Graphene, Copper(100), Cobalt, electrodeposition, MOKE, CV |
DOI URL: | https://doi.org/10.6345/NTNU202203872 |
論文種類: | 學術論文 |
相關次數: | 點閱:134 下載:0 |
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本研究在水溶液環境中利用電化學的方式成長Co薄膜在Cu(100)及graphene
/Cu上並進行磁性量測,再加入紫精酸的異質介面,研究Co薄膜在不同的介面對磁特性的影響,其中使用循環伏安法量測其成分組成,並使用磁光柯爾效應進行磁性量測。發現5至20 nm的Co薄膜在Cu(100)及graphene/Cu表面上成長,隨著厚度上升皆表現出縱向方向為磁化易軸,接著進一步分析縱向的磁滯曲線可以得到其飽和磁化量、殘磁、方正度以及矯頑力。Co/Cu(100)於不同電位測量時,其飽和磁化量、殘磁、矯頑力並無明顯的變化,而Co/graphene/Cu上則在特定的厚度會產生雙磁滯曲線疊加的現象,並且隨著電位可以控制其磁特性,比較石墨烯插層對Co/Cu薄膜的矯頑力影響,發現在任何電位下Co/Cu(100)薄膜的矯頑力皆大於Co/graphene
/Cu薄膜。而後在Co/Cu(100)上覆蓋紫精酸會使得較薄的Co膜其飽和磁化量與殘磁下降且矯頑力上升,但是至12 nm以上時便不受影響,然而Co/grap
hene/Cu於不同電位測量時,覆蓋紫精酸並無明顯變化。此研究發現在紫精酸及石墨烯之異質介面對Co薄膜受電位控制時的磁特性有微小的變化,對於開發電控制磁性元件附有應用潛力。
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