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研究生: 劉康翔
Liu, Kang-Hsiang
論文名稱: 整合式多功無機鈣鈦礦發光電化學元件與電阻式記憶體製作與應用
Integration of multifunction all inorganic perovskite-based Light emitting electrochemical cells (LEC) and Resistive random access memory (RRAM) for the production and application
指導教授: 李亞儒
Lee, Ya-Ju
學位類別: 碩士
Master
系所名稱: 光電工程研究所
Graduate Institute of Electro-Optical Engineering
論文出版年: 2020
畢業學年度: 108
語文別: 中文
論文頁數: 55
中文關鍵詞: 全無機鈣鈦礦電阻式記憶體發光電化學元件
英文關鍵詞: perovskite, Resistive random access memory, Light-emitting electrochemical cell
DOI URL: http://doi.org/10.6345/NTNU202001341
論文種類: 學術論文
相關次數: 點閱:133下載:0
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  • 全無機鈣鈦礦材料因其卓越的功能性和穩定性而被認為是各種電子應用的優異半導體材料。本論文使用全無機鈣鈦礦量子點 (CsPbBr3) 並選用四層簡易的結構 (Ag/Poly(methyl methacrylate) /CsPbBr3/indium tin oxide) 來達到同時具備發光電化學元件 (Light-emitting electrochemical cell, LEC) 元件發光特性與電阻式記憶體 (Resistive random access memory, RRAM) 記憶特性的新元件。當 Ag 電極上施加負偏壓時,會以 LEC 發光特性作用;若在 Ag 電極上施加正偏壓時,則會以 RRAM 電阻轉換特性作用。
    接著對此元件以氧化銦錫做兩個串連,整合出兩個視為一組的新元件,當施加正偏壓時,一側做記憶體寫入另一側做二極體發光;若施加負偏壓時,兩個元件作交換原本做記憶體寫入的元件轉成二極體發光,二極體發光轉成記憶體寫入,來達到比原本傳統電阻式記憶體以電流判讀多一種發光特性去判讀記憶體的方式。最後分析串連後元件的傳導機制與能階示意圖。

    All-inorganic perovskite materials are considered to be excellent semiconductor materials for various electronic applications due to their excellent functionality and stability. This paper uses all-inorganic perovskite quantum dots (CsPbBr3) and selects a four-layer simple structure (Ag/Poly(methyl methacrylate) /CsPbBr3/indium tin oxide) to achieve both the luminescence characteristics of the Light-emitting electrochemical cell (LEC) and the resistive random access memory (RRAM) is a new component with memory characteristics. When a negative bias is applied to the Ag electrode, it will act as the LEC light-emitting characteristic; if a positive bias is applied to the Ag electrode, it will act as the RRAM resistance conversion characteristic.
    Then use indium tin oxide to make two series connections for this device to integrate two new devices as a group. When a positive bias is applied, one side is used for memory writing and the other side is used for diode light emission; When a negative bias is applied, the two elements are exchanged. The element originally used for memory writing turns into a diode to emit light, and the diode emits light to turn into memory for writing, which is more current than the original traditional resistive memory. A way of luminous characteristics to judge memory. Finally, the conduction mechanism and energy level diagrams of the connected devices are analyzed.

    第一章 序論 1 1.1 前言 1 1.2 研究動機與目的 1 1.3 發光電化學元件簡介 2 1.4 記憶體簡介 4 第二章 基本原理與文獻回顧 6 2.1 鈣鈦礦結構起源 6 2.1.1 室溫合成鈣鈦礦CsPbX3 7 2.2 發光電化學元件 (LEC) 發光原理 7 2.2.1 電化學系統 7 2.2.2 電動力學系統 9 2.3 LEC 電流機制 10 2.3.1 空間電荷限制電流 10 2.3. 2 注入電荷限制電流 11 2.4 電阻式記憶體基本特性 11 2.4.1 電阻轉換現象 12 2.4.2 電阻式記憶體轉換特性 12 2.5 記憶體傳導機制 13 2.5.1 蕭基發射 13 2.5.2 歐姆傳導 14 2.5.3 空間電荷限制電流 15 2.5.4 離子傳導 16 2.5.5 穿遂效應 16 2.6 電流傳導機制與電阻轉換特性 17 2.7 射頻磁控濺鍍介紹與原理 19 2.7.1 電漿基礎原理 20 2.7.2 濺鍍原理 21 2.7.3 直流與射頻濺鍍 22 2.7.4 磁控濺鍍 22 2.8 掃描式電子顯微鏡 23 第三章 實驗方法 25 3.1實驗流程 25 3.2鈣鈦礦 CsPbX3 室溫合成 26 3.2.1前驅物合成 26 3.2.2鈣鈦礦合成與純化 27 3.3 PMMA溶液配製 29 3.4 薄膜濺鍍 29 3.5 清洗機板 30 3.6 元件製成 30 3.7 黑箱量測 32 第四章 元件量測分析 33 4.1 鈣鈦礦薄膜 33 4.1.1 鈣鈦礦量子點晶體結構,XRD量測 33 4.1.2 鈣鈦礦量子點薄膜吸收光譜與光致發光光譜 34 4.1.3 掃描式電子顯微鏡分析鈣鈦礦薄膜 35 4.2 掃描式電子顯微鏡分析元件結構 37 4.3 LEC元件電致發光分析 38 4.3.1 LEC I-V 特性 39 4.3.2 LEC 元件電致發光光譜 40 4.4 RRAM 元件電性量測分析 42 4.4.1 Set 與 Reset 過程 42 4.4.2 電流傳導機制 43 4.4.3 Retention 量測 44 4.5 整合LEC與RRAM元件電性分析 45 4.5.1 電壓與電流 I-V 特性 45 4.5.2 電阻絲建立與中斷過程 48 4.5.2 電子與電洞能階中傳導 49 4.5.3 Retention 量測 52 第五章 總結 53 第六章 參考文獻 54

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