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研究生: 彭雅鈴
Ya Ling Peng
論文名稱: 磷砷化鎵銦薄膜結構調制光譜之研究
Study of Modulation Spectroscopy of Microstructures InGaAsP
指導教授: 陸健榮
學位類別: 碩士
Master
系所名稱: 物理學系
Department of Physics
畢業學年度: 87
語文別: 中文
論文頁數: 101
中文關鍵詞: 多量子井應力p-i-n光調制反射光譜Franz-Keldysh 振盪
英文關鍵詞: multiple quantum wells, strain, p-i-n, photoreflectance (PR), Franz-Keldysh oscillation(FKO)
論文種類: 學術論文
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  • 我們以光調制反射光譜(Photoreflectance/PR)來研究由分子束磊晶法(MBE)長成的磷化銦及磷砷化鎵銦之多層薄膜結構在不同溫度下其電—光性質的變化。實驗結果包含了量子井躍遷及兩組Franz-Keldysh振盪譜形(FKO)。由於樣品內部為p-i-n結構,其p型與n型摻雜可提供大量的空間自由載子,形成空間電荷造成空間電場,由實驗的振盪譜形可推算出內建電場的大小。而藉由理論模型計算可以得到量子井內子能階的躍遷能量值,並與實驗譜線擬合的結果相比較。

    We have studied the strained multiple quantum wells (MQW) InGaAsP/InP p-i-n heterostructures using photo-reflectance(PR) at various temperatures. The samples used in our experiments were grown by molecular-beam-epitaxy(MBE). The experimental spectrum consists of various interband transition features and Franz-Keldysh oscillations (FKOs). Experimental spectra were fitted to calculated lineshapes to extract correct interband transition energies and internal electric filed, then compared to theoretical results.

    第一章 簡介……………………………………………………….. 6 第二章 原理 2-1 電子躍遷理論……………………………………………... 9 2-2 光學函數與電子躍遷的關係……………………………. 12 2-3 調制光譜的基本原理……………………………………. 18 2-4 電場調制…………………………………………………. 20 2-5 弱電場調制………………………………………………. 23 2-6 低維度半導體結構的調制光譜與結果…………………. 25 2-7 光調制反射光譜的機制…………………………………. 26 2-8 半導體能帶結構的應變效應……………………………. 27 第三章 實驗與結果 3-1 樣品結構…………………………………………………. 32 3-2 光調制實驗………………………………………………. 34 3-3 光調制實驗的光譜結果…………………………………. 36 第四章 分析與討論 4-1 樣品能帶結構分析………………………………………. 37 4-2 內建電場的分析…………………………………………. 42 4-3 量子井能階躍遷的計算與分析…………………………. 47 第五章 結論與展望……………………………………………… 58

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