在本研究中透過合成一系列具備強量子侷限的II-VI族的有機-無機層狀奈米片。奈米片本身為兩個原子厚度的無機層，並將各個無機單層透過雙牙基胺配體以共價鍵互相連接，配體亦可作為介電絕緣層將將電子限制於平面內。吸收光譜中觀察到的吸收出現巨大的藍移以及C3v的對稱性為二維形貌的固有性質。透過摻雜過渡金屬我們在材料中引入與摻雜雜質的自旋-軌道相互作用以及額外的光學活性，在C3v的對稱性下材料理論上會因為簡併性被打破進而產生更大的賽曼分裂，錳本身特殊的自旋躍遷機制以及長半生期的磷光放光都使摻雜錳的寬帶系半導體在低溫下以及在磁場中出現特殊的磁光現象，我們透過與物理系合作嘗試了解這些現象，並透過光學元件的設計，嘗試探討這些現象背後的作用的機制。

In this work, a series of II-VI group organic-inorganic layered nanosheets with strong quantum confinement were synthesized. The nanosheet itself has a two-atom-thick inorganic layer that can be called a monolayer, and each inorganic monolayer is covalently bonded through a diamine ligand. The ligand can also serve as an insulating layer to confine electrons. in the plane. The large blue shift observed in the absorption spectrum and the symmetry of C3v are intrinsic properties of the two-dimensional topography. By doping transition metals, we can introduce additional spin-orbit interactions and additional optical activity. Under the symmetry of C3v, the material will theoretically have giant Zeeman splitting, the special spin transition mechanism of manganese itself and the phosphorescence emission with long lifetime makes the manganese-doped wide-band gap semiconductor exhibit special optical phenomena at low temperature and in a magnetic field. Through cooperation with the Department of Physics, we try to measure the spin-dependent photoluminescence spectrum of manganese, and anomalies are observed and attempts are made to explore the reasons behind these phenomena.

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