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研究生: 唐啟軒
Tang, Chi-Hsuan
論文名稱: 鐵電鉿基氧化物之負電容電晶體:直流反應、高速反應、穩定度測試
Ferroelectric Hafnium–Based Oxides Negative-Capacitance FET:DC, Transient and Reliability
指導教授: 李敏鴻
Lee, Min-Hung
學位類別: 碩士
Master
系所名稱: 光電工程研究所
Graduate Institute of Electro-Optical Engineering
論文出版年: 2017
畢業學年度: 105
語文別: 中文
論文頁數: 68
中文關鍵詞: 鉿基氧化物負電容效應暫態分析穩定度測試
英文關鍵詞: Hafnium-based oxides, Negative capacitance effect, Transient, Reliability
DOI URL: https://doi.org/10.6345/NTNU202202000
論文種類: 學術論文
相關次數: 點閱:107下載:0
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  • 具鐵電效應之鉿基氧化物(Hafnium-based Oxides)於近幾年吸引相當多討論,在適當的摻雜與退火後將具有鐵電負電容之特性。應用在電晶體上能夠使其具有陡峭次臨界擺幅陡峭之特性,將大大地降低元件耗能,非常具有作為低功耗元件的潛力。且鉿基氧化物本身與矽基板間有著高相容性,在業界的使用也已行之有年,能夠快速地整合進入現有製程。
    本研究將針對不同摻雜與退火條件之鉿基氧化物,以元件應用為前提進行直流操作、快速操作以及可靠度測試的研究。目標是發展利用鐵電之鉿基氧化物做為電晶體,在實用面的材料以及特性分析。累積研究結果,供未來世代元件使用。

    Ferroelectric Hafnium–based oxide has attracted lots of attention due to the negative capacitance effect, and it can be achieved with properly dopants and annealing. Steep SS (Subthreshold Swing) FETs using ferroelectric Hafnium-based oxide has the advantages of process compatibility and devices scale down ability, and it can be the candidates of future IoT era for ultra-low power applications.
    In this thesis, the Hafnium–based oxides with various dopants and annealing conditions will be developed. As well as the measurements also be performed, such as DC sweep operation, transient behavior and reliability discussion. The relation between process and material analysis will be discussed, in order to reach high performance electrical characteristics. The promising technology is feasible solution for sub-5nm technology node.

    目錄 第一章 簡介 1 第二章 鉿基氧化物電晶體在直流操作之電性 14 第一節 簡介 14 第二節 Al:HfO2之基本電性 16 第三節 Zr:HfO2之基本電性 21 第四節 結論 27 第三章 鉿基氧化物電晶體在高速操作下之暫態分析 29 第一節 簡介 29 第二節 鐵電量測 30 第三節 電晶體高速操作下之反應 34 第四節 結論 49 第四章 具鐵電之Zr:HfO2電晶體可靠度測試 51 第一節 簡介 51 第二節 Gate last 製程元件分析 52 第三節 穩定度 56 第四節 結論 63 第五章 結論與未來工作 64 第一節 綜合結論 64 第二節 未來工作 66 參考文獻 67

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