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研究生: 佟顯榮
Tong, Sian-Rong
論文名稱: 固態轉化石墨烯於氧化鋅奈米柱 發光二極體效能之研究
A study of enhanced UV-emissions through a growth of transfer-free graphene on n-ZnO nanorods/p-GaN light-emitting diodes
指導教授: 李亞儒
Lee, Ya-Ju
學位類別: 碩士
Master
系所名稱: 光電工程研究所
Graduate Institute of Electro-Optical Engineering
論文出版年: 2016
畢業學年度: 104
語文別: 中文
論文頁數: 39
中文關鍵詞: 增強紫外光轉移石墨烯異質接面二極體
英文關鍵詞: enhanced UV emissions, transfer-free graphene, heterojunction light-emitting diodes
DOI URL: https://doi.org/10.6345/NTNU202204276
論文種類: 學術論文
相關次數: 點閱:108下載:0
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  • 在本論文研究中,我們提出一具有前瞻性的策略來探討利用免轉移基板技術將薄層石墨烯片直接成長於n型氧化鋅奈米柱/p型氮化鎵異質接面發光二極體(LED)以提升該元件紫外發光之特性。我們利用射頻磁控濺鍍系統將非晶碳與金屬鎳薄膜鍍在LED元件上,再經由快速熱退火處理形成薄層石墨烯片於元件表面。結果發現,在低溫退火階段(~攝氏400度),非晶碳會擴散至金屬鎳的上面並形成碳化鎳;在高溫退火階段(攝氏800-1100度),我們發現鎳會自動蒸發,亞穩態的碳化鎳逐漸地轉變為石墨烯。經由一系列測試我們發現在鎳/碳比為65奈米/5奈米、退火溫度為攝氏1100度以及升溫速率為每秒攝氏15度的條件下,該實驗有最佳化的條件;經由拉曼光譜量測在最佳化條件下的石墨烯I2D/IG訊號比為0.42。與對照組(無石墨烯)相比,我們提出的元件結構搭配薄層石墨烯片其導通電壓縮小了3倍,這意味著其片電阻有顯著的下降情形。在電致發光部分,由於大部分注入的載子會局限在氧化鋅奈米柱一側,隨著注入電流的增加,我們提出的元件結構其紫外發光亦跟著增加,其現象可歸因於量子侷限效應。根據上述結果充分說明了我們提出的元件結構對於未來高效率LED在紫外發光的發展具有相當的前瞻性。

    In this study, a promising strategy for enhanced UV emissions through a growth of transfer-free graphene on the n-ZnO nanorods(NRs) /p-GaN heterojunction light-emitting diodes (LED) is described. Few graphene layers are directly formed atop the LED device by the post-RTA treatment on sputtered amorphous carbon (a-C) and nickel (Ni) layers. It was found that in the low-temperature annealing stage (~400℃), the a-C diffuses into the Ni top layer to form Ni3C, while in the high-temperature annealing stage (800-1100℃), the metastable Ni3C transforms gradually into graphene by autonomous evaporation of Ni. Under the optimized fabrication condition (Ni/C=65nm/5nm, RTA=1100 ℃ with a heating rate~15 ℃/s), the I2D/IG ratio of 0.42 by Raman spectrum was obtained. As compared with the reference LED without graphene atop, the turn-on voltage of proposed hybridized structure is decreased by about 3 times, implying a significant decrease in the sheet resistance of the proposed device. The UV emission of electroluminescence (EL) spectra of treatment LED increases with the increasing injection currents, mainly attributed to the quantum confinement effect because the most of injected carriers are confined within the ZnO NRs. It suggests that the proposed hybridized structure will pave the way for the development of high efficient LED in the UV emission regime.

    目錄 第一章 緒論.....1 第二章 工作原理與文獻回顧.....3 2-1 發光二極體介紹.....3 2-1-1紫外光發光二極體近年研究與應用發展.....3 2-1-2紫外光發光二極體原理.....5 2-2 氧化鋅之材料特性.....6 2-2-1氧化鋅的製備方法.....7 2-3石墨烯之材料特性.....9 2-3-1石墨烯奈米片製作方式.....11 第三章 實驗原理與架構.....13 3-1樣品製備流程.....13 3-1-1清洗基板.....13 3-1-2氧化鋅奈米柱製程.....13 3-1-3固態石墨烯製作.....14 3-2儀器原理.....15 3-2-1 濺鍍(RF sputtering).....15 3-2-2 光激發螢光(Micro photoluminescence,Micro PL).....16 3-3元件材料分析.....18 3-3-1拉曼光譜(Raman spectra).....18 3-3-2 X光繞射(X-ray Diffraction:XRD).....20 3-3-3場發射式掃描電子顯微鏡(SEM).....22 第四章 結果與討論.....23 4-1掃描式電子顯微鏡(SEM).....23 4-2 X光繞射結果分析.....25 4-3 Raman光譜分析.....28 4-4 光激螢光光譜分析.....31 4-5 元件電性分析.....33 第五章 總結.....35 5-1 結論.....35 第六章 參考文獻.....36

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