層狀過渡金屬硫屬化合物是繼石墨烯被發掘後最為廣泛研究的一種奈米材料，它具有特殊的層狀原子排列結構而且具有的光電特性，已經在許多光電、電子、氣體或生物感測技術以及觸媒反應等方面被廣泛的研究。而這些特性可以透過改變堆疊的層數與材料成份的方式來加以變化。以這種方式調控的材料可以增加材料的適用範圍，但是如何加入雜質與相對應技術對於過渡金屬硫屬化合物的應用發展是一大挑戰。本論文將探討添加雜質元素的方法及雜質對二硫化鎢材料合成過程的影響。
本實驗採用二階段方式合成二硫化鎢，首先利用共濺鍍技術成長含雜質的鎢合金薄膜前驅物，透過硫化反應而成最終的二維材料。透過鍍膜參數控制厚度與成份。利用 X光繞射儀、X光光電子儀、拉曼光譜儀來分別探討合成後材料的顯微結構、鍵結能量與鍵結的判斷。用原子力顯微鏡來分析合成後材料的表面形貌。透過這些分析數據比對，來探討合金添加對WS2 硫化反應過程最佳化的影響。

Layered transition metal chalcogenides (TMDs) compounds are the most promising nano materials which are evaluated after graphene being discovered. TMDs have special two dimensional layered atomic structure, and its properties can be modified via the control of number of layers or changing its compositions. The controlled properties have been widely published in opto-electric, electronics, gas and bio sensing and catalytic research. Doping element and related techniques are a big challenge for current TMDs development. In this study, we will add some alloy element into the WS2 and study the doping effects on the process of film formation.
Here, a two-step synthesis was applied for TMDs formation. That is, the alloy precursor film prepared by co-sputtering system and sulfurized. The composition and thickness were well controlled via the parameters setting. XRD, XPS and Raman were used for the microstructure, binding energy and bonding inspection, respectively. AFM was used for the surface morphology observation. Comparing the analysis results, the doping effect on forming optimal sulfurization process of doped WS2 film was discussed.

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