研究生: |
羅時峰 Shry-Fong Lou |
---|---|
論文名稱: |
砷化鎵/砷化鎵銦單量子井的電光性質 Electrooptical Properties of InGaAs/GaAs Single Quantum Wells |
指導教授: |
黃福坤
Hwang, Fu-Kwun |
學位類別: |
碩士 Master |
系所名稱: |
物理學系 Department of Physics |
畢業學年度: | 87 |
語文別: | 中文 |
論文頁數: | 81 |
中文關鍵詞: | 量子井 、光調制反射光譜 、矽單層摻雜 、Franz-Keldysh 振盪 |
英文關鍵詞: | quantum well, photoreflectance, Si delta doping, Franz-Keldysh oscillation |
論文種類: | 學術論文 |
相關次數: | 點閱:298 下載:0 |
分享至: |
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
我們以光調制反射光譜(PR)來研究由分子束磊晶法(MBE)長成的InGaAs/GaAs單量子井結構在不同溫度及不同偏壓下其電-光性質的變化。
實驗的樣品共有兩塊,分別以(100)與(111)B的基底所長成,樣品結構包含了寬度為60A的單量子井外,並在樣品近表面500A處有Si的單層摻雜
(delta-doping)濃度為5*10^{12} cm^-2。實驗的光譜在GaAs能隙之上呈現出Franz-Keldysh振盪(FKO),GaAs能隙之下為量子井子能階躍遷的訊號。我們以理論模型計算量子井子能階的躍遷能量,並與實驗譜圖相比較,經由振盪譜形的分析,推算出樣品表面的內建電場。
The electrooptical properties of (100) and (111)B InGaAs/GaAs single quantum wells (SQW) have been studied by photoreflectance (PR) spectroscopy at various temperetures and
under different biases. The samples used in our experiments were grown by molecular-beam-epitaxy (MBE) on the (100) and (111)B GaAs substrates separately. There is a Si delta-doping layer of 5 *10^{12} cm^-2 at 1000A away from the SQW and 500A
under the GaAs surface. The PR spectra features above the nergy gap of GaAs are the Franz-Keldish oscillations (FKOs), and features below the energy gap of GaAs are the excitonic interband transitions. Theoretical calculations have been performed to identify the origins of the various spectral features. By the analysis of the line shapes of the FKOs, we obtained the internal electric fields of the samples.
1. D. L. Smith,Solid State Communication,Vol.57,No.12,919(1986).
2. E. A. Caridi,T. Y. Chang,K. W. Goossen,L. F. Eastman,Appl. Phys. Lett.56(7),659(1990).
3. J. L. Sanchez-Rojas,A. Sacedon,F. Gonzalez-Sanz,E. Calleja,E. Munoz Appl. Phys. Lett.65(16),2042(1994).
4. T. S. Moise,L. J. Guido,R. C. Barker,J. Appl. Phys.74(7),4681
(1993).
5. H. Shen,M. Dutta,W. Chang,R. Moerkirk,D. M. Kim,K. W. Chung,P. P. Ruden,
M. I. Nathan,M. A. Stroscio,Appl. Phys. Lett.{\bf 60}(19),2400(1992).
6. D. E. Aspnes,in ``Handbook on Semiconductors'',edited by T. S. Moss,Vol.2,p. 109.
7. C. H. Chan,Y. F. Chen,M. C. Chen,H. H. Lin, G. J. Jan,Y. H. Chen,J. Appl. Phys.,Vol.84,1595(1998).
8. ``Optical Properties of Solids'',edited by F. Abeles,chap. 2.
9. N. Peyghambarian,S. W. Koch and A. Mysyrowicz,``Introduction to Semiconductor Optics'',chap.VI.
10. B. O. Seraphin and N. Bottka,Phys. Rev.145,628(1966).
11. D. G. Seiler and C. L. Littler ``The Spectroscopy of Semiconductors'',Vol.2,p. 255.
12 Shyh Wang,``Fundamentals of Semiconductor Theory and Device Physics'',chap. 12.
13. Landau and Lifshitz,``QuantumMechanics'',2nded.,Mathematical Appendices.
14. D. E. Aspnes,Phys. Rev.147,554(1966).
15 Gerald Bastard,``Wave Mechanics Applied to Semiconductor Heterostructures'',chap. II.
16. K. Suzuki and J. C. Hensel, Bull. Am. Phys. Soc.14,113(1969).
17. Jasprit Singh,``Physics of Semiconductors and Their Heterostructures'',chap. 7.
18. F. H. Pollak and M. Cardona,Phys. Rev.172,816(1966).
19. C. D. Thurmond,J. Electrochem. Soc.122,1133(1975).
20. K. H. Goetz,D. Bimberg,H. Jurgensen,J. Selders,A. V. Solomonov,
G. F. Glinski,M. Razeghi,J. Appl. Phys.54(8),4543(1983).
21. D. J. Arent,K. Deneffe,C. Van Hoof,J. De Boeck,G. Borghs,J. Appl. Phys.66(4),1739(1989).
22. B. V. Shanabrook,O. J. Glembocki,D. A. Broido,W. I. Wang,Phys. Rev.B39,3411(1989).
23. W. S. Chi and Y. S. Huang,Semicond. Sci. Techol.10,127(1995).
24. ``Properties of III-V quantum wells and Superlattices'',edited by P. Bhattacharya.
25. Y. S. Huang,H. Qiang,F. H. Pollak,G. D. Pettit,P. D. Kirchner,J. M. Woodall,H. Strgier,L. B. Sorensen,J. Appl. Phys.70(12),7537(1991).