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研究生: 羅時峰
Shry-Fong Lou
論文名稱: 砷化鎵/砷化鎵銦單量子井的電光性質
Electrooptical Properties of InGaAs/GaAs Single Quantum Wells
指導教授: 黃福坤
Hwang, Fu-Kwun
學位類別: 碩士
Master
系所名稱: 物理學系
Department of Physics
畢業學年度: 87
語文別: 中文
論文頁數: 81
中文關鍵詞: 量子井光調制反射光譜矽單層摻雜Franz-Keldysh 振盪
英文關鍵詞: quantum well, photoreflectance, Si delta doping, Franz-Keldysh oscillation
論文種類: 學術論文
相關次數: 點閱:298下載:0
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  • 我們以光調制反射光譜(PR)來研究由分子束磊晶法(MBE)長成的InGaAs/GaAs單量子井結構在不同溫度及不同偏壓下其電-光性質的變化。
    實驗的樣品共有兩塊,分別以(100)與(111)B的基底所長成,樣品結構包含了寬度為60A的單量子井外,並在樣品近表面500A處有Si的單層摻雜
    (delta-doping)濃度為5*10^{12} cm^-2。實驗的光譜在GaAs能隙之上呈現出Franz-Keldysh振盪(FKO),GaAs能隙之下為量子井子能階躍遷的訊號。我們以理論模型計算量子井子能階的躍遷能量,並與實驗譜圖相比較,經由振盪譜形的分析,推算出樣品表面的內建電場。

    The electrooptical properties of (100) and (111)B InGaAs/GaAs single quantum wells (SQW) have been studied by photoreflectance (PR) spectroscopy at various temperetures and
    under different biases. The samples used in our experiments were grown by molecular-beam-epitaxy (MBE) on the (100) and (111)B GaAs substrates separately. There is a Si delta-doping layer of 5 *10^{12} cm^-2 at 1000A away from the SQW and 500A
    under the GaAs surface. The PR spectra features above the nergy gap of GaAs are the Franz-Keldish oscillations (FKOs), and features below the energy gap of GaAs are the excitonic interband transitions. Theoretical calculations have been performed to identify the origins of the various spectral features. By the analysis of the line shapes of the FKOs, we obtained the internal electric fields of the samples.

    第一章 簡介 1-1 量子井 8 1-2 受壓層結構 8 1-3 壓電電場 9 第二章 調制原理 2-1 電子躍遷理論 10 2-2 光學函數與電子躍遷的關係 13 2-3 調制光譜的基本原理 18 2-4 光調制反射的機制 20 2-5 Franz-Keldysh 效應 21 第三章 受壓層能帶結構 3-1 III-V族塊材能帶結構 24 3-2 應力對InGaAs/GaAs單量子井能帶結構的影響 25 第四章 實驗與結果 4-1 樣品結構 27 4-2 光調制實驗及實驗儀器裝置 28 4-3 加偏壓在樣品上 30 4-4 光調制實驗的光譜結果 31 第五章 分析與討論 5-1 Si delta-doping 對能帶結構影響的討論 32 5-2 樣品量子井能帶結構分析 33 5-3 量子井子能階躍遷的計算與分析 38 第六章 結論與展望 47 圖(1)~圖(34) 48~73 附錄 74 參考文獻 78

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