本研究利用射頻電漿輔助化學束磊晶系統於矽(111)基板上製備氮化矽緩衝層，針對製備緩衝層之電漿氮氣流量比、氮化時間進行研究，探討氮化銦於不同條件之緩衝層生長其結構、結晶性及電子遷移率變化。研究結果顯示，在實驗條件下矽(111)基板表面會產生氮化矽層(SixNy layer)，隨著氮化時間或流量增加，表面會形成β-Si3N4，有助於纎鋅礦結構氮化銦磊晶生長。透過X光繞射分析證實經過表面氮化處理的試片皆能成長氮化銦磊晶。本研究再進行製備氮化氮化銦/氮化矽雙緩衝層於矽(111)基板，並針對氮化銦磊晶薄膜之特性進行探討，研究結果證實，使用雙緩衝層技術之氮化銦磊晶薄膜能提高結晶性及電性，隨著製備氮化矽層時氮氣流量及氮化時間增加，結晶性及電性均有所提升。

In this research, radio frequency plasma assisted molecular beam epitaxy system was used to grow SixNy buffer layer on silicon (111) substrate. The flow ratio of growth the buffer layer and the nitriding time have been studied. The structure, crystallinity and electron mobility of indium nitride grown under different treatment buffer were investigated. SixNy layer was produced on the surface of the silicon (111) substrate under experimental conditions. With the increasing of the nitriding time and the flow ratio, the formation of β-Si3N4 crystalline was found on the substrate surface. This enhanced the nucleation quality of the wurtzite InN epitaxy film. It was confirmed by XRD that the epi-InN materials was successfully growth on all nitrided-substrates. The properties of InN epitaxy film in the preparation of nitrided-InN/ SixNy double buffer layer on silicon (111) substrate has also been studied. InN epitaxy film which used double buffer layer can improve the crystallinity and the electrical properties effectively. With the increasing of nitrogen flow rate and nitridation time of silicon nitride buffer layer, the crystallinity and the electron mobility increased.

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