研究生: |
陳宣翰 Chen, Hsuan-Han |
---|---|
論文名稱: |
氧化鉿鋯二極體與場效電晶體之記憶體應用 Hf1-xZrxO2 Diode and MOSFETs for Memory Applications |
指導教授: |
李敏鴻
Lee, Min-Hung |
學位類別: |
碩士 Master |
系所名稱: |
光電工程研究所 Graduate Institute of Electro-Optical Engineering |
論文出版年: | 2017 |
畢業學年度: | 105 |
語文別: | 中文 |
論文頁數: | 103 |
中文關鍵詞: | 鉿基氧化物 、負電容電晶體 、次臨界擺幅 、鐵電電晶體 、金屬-鐵電層-金屬結構 |
英文關鍵詞: | Hafnium-based Oxides, NC-FET, subthreshold swing, metal-ferroelectric film-metal structure, FeFET |
DOI URL: | https://doi.org/10.6345/NTNU202202359 |
論文種類: | 學術論文 |
相關次數: | 點閱:127 下載:0 |
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具有鐵電效應的新鐵電材料-鉿基氧化物(Hafnium-based Oxides),這幾年除了研究討論度相當高之外,應用面也是相當的廣,例如其鐵電負電容特性,藉由突破次臨界擺幅的物理極限60mV/dec,降低了操作電壓VDD,間接降低了元件的耗能,達到低功耗的目的。又例如藉由鐵電特性,使電流-電壓曲線具有遲滯現象,使之可以應用在1T記憶體上面,也可以製作成MIM結構應用在1T-1C記憶體中,而且鉿基氧化物與矽基板相容性高,可以整合在現有的CMOS半導體製程上。本研究將針對於應用在鐵電記憶體上,使用Hf1-xZrxO2作為鐵電層,藉著不同物理厚度、不同摻雜比例,以及退火溫度等條件,探討分析其在記憶體應用方面的表現。
關鍵字:鉿基氧化物、負電容電晶體、次臨界擺幅、金屬-鐵電層-金屬結構、鐵電電晶體。
In recent years, Hafnium-based oxides, have experienced intensive studies and have already been widely application, such as FeRAM, negative-capacitance (NC) FET, and other related fields. With the application of NC-FET, by breaking through the subthreshold swing limit (60 mV/dec,) the reduction in operating voltage (VDD) can results in lower power consumption. Moreover, Hafnium-based oxides can be used 1T-1C and 1T structure memory. In this work, devices are made into MIM structure or FET to study characteristic performance by different conditions such as annealing temperatures and dopant contents.
Keyword: Hafnium-based Oxide, NC-FET, subthreshold swing, metal-ferroelectric film-metal structure, FeFET
1. T. S. Böscke, J. Müller, D. Bräuhaus, U. Schröder and U. Böttger , “ Ferroelectricity in hafnium oxide thin films,” Appl. Phys. Lett., vol. 99, 102903, 2011.
2. J. Müller, T. S. Böscke, D. Bräuhaus, U. Schröder, U. Böttger, J. Sundqvist, P. Kücher, T. Mikolajick, and L. Frey, “Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications,’’ Appl. Phys. Lett., vol. 99, iss. 11, 112901, 2011.
3. J. Müller, T. S. Böscke, U. Schröder, S. Mueller, D. Bräuhaus, U. Böttger, L. Frey, and T. Mikolajick, “Ferroelectricity in Simple Binary ZrO2 and HfO2,” Nano Lett., pp. 4318−4323, 2012
4. T. S. Böscke, St. Teichert, D. Bräuhaus, J. Müller, U. Schröder, U. Böttger and T. Mikolajick, “Phase transitions in ferroelectric silicon doped hafnium oxide,’’ Appl. Phys. Lett., vol. 99, no. 11, 112904, 2011.
5. J. Müller, U. Schröder, T. S. Böscke, I. Müller, U. Böttger, L. Wilde, J. Sundqvist, M. Lemberger, P. Kücher, T. Mikolajick, and L. Frey, “Ferroelectricity in yttrium-doped hafnium oxide,’’ J. Appl. Phys., vol. 110, no. 11, 114113, 2011.
6. S. Müller, J. Müller, A. Singh1, S. Riedel, J. Sundqvist, U. Schroeder and T. Mikolajick, “Incipient Ferroelectricity in Al-Doped HfO2 Thin Films,’’, Adv. Funct. Mater., vol. 22, no. 11, pp. 2412-2417, June 6, 2012.
7. T. Schenk, S. Mueller, U. Schroeder, R. Materlik, A. Kersch, M. Popovici, C. Adelmann, S. V. Elshocht and T. Mikolajick, “Strontium Doped Hafnium Oxide Thin Films: Wide Process Window for Ferroelectric Memories.” ESSDC., 2013. 6818868 .
8. Chernikova, D. S. Kuzmichev, D. V. Negrov, M. G. Kozodaev, S. N. Polyakov, and A. M. Markeev., “Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks,” Appl. Phys. Lett., vol. 108, no. 24, 242905, 2016.
9. T. S. Böscke, J. Müller, D. Bräuhaus, U. Schröder and U. Böttger , “Ferroelectricity in Hafnium Oxide: CMOS compatible Ferroelectric Field Effect,’’ in IEDM Tech. Dig., pp. 547-550, Dec. 2011.
10. M. Trentzsch et al., “A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs”, IEDM Digest of Technical Papers, 11.5.1-11.5.4 (2016).
11. M. H. Lee, S.-T. Fan, C.-H. Tang, P.-G. Chen, Y.-C. Chou, H.-H. Chen, J.-Y. Kuo, M.-J. Xie, S.-N. Liu, M.-H. Liao, C.-A. Jong, K.-S. Li, M.-C. Chen, and C. W. Liu, “Physical Thickness 1.x nm Ferroelectric HfZrOx Negative Capacitance FETs, ” Technical Digest, International Electron Device Meeting (IEDM), pp. 306-309, San Francisco, Dec. 3-7, 2016
12. http://www.ndl.org.tw/docs/publication/19_1/pdf/P02-13.pdf
13. Fujitsu
14. http://www.ferrodevices.com/1/297/support.asp
15. https://en.wikipedia.org/wiki/PlayStation_2_models
16. http://www.jreast.co.jp/tc/pass/suica.html