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研究生: 陳宣翰
Chen, Hsuan-Han
論文名稱: 氧化鉿鋯二極體與場效電晶體之記憶體應用
Hf1-xZrxO2 Diode and MOSFETs for Memory Applications
指導教授: 李敏鴻
Lee, Min-Hung
學位類別: 碩士
Master
系所名稱: 光電工程研究所
Graduate Institute of Electro-Optical Engineering
論文出版年: 2017
畢業學年度: 105
語文別: 中文
論文頁數: 103
中文關鍵詞: 鉿基氧化物負電容電晶體次臨界擺幅鐵電電晶體金屬-鐵電層-金屬結構
英文關鍵詞: Hafnium-based Oxides, NC-FET, subthreshold swing, metal-ferroelectric film-metal structure, FeFET
DOI URL: https://doi.org/10.6345/NTNU202202359
論文種類: 學術論文
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  • 具有鐵電效應的新鐵電材料-鉿基氧化物(Hafnium-based Oxides),這幾年除了研究討論度相當高之外,應用面也是相當的廣,例如其鐵電負電容特性,藉由突破次臨界擺幅的物理極限60mV/dec,降低了操作電壓VDD,間接降低了元件的耗能,達到低功耗的目的。又例如藉由鐵電特性,使電流-電壓曲線具有遲滯現象,使之可以應用在1T記憶體上面,也可以製作成MIM結構應用在1T-1C記憶體中,而且鉿基氧化物與矽基板相容性高,可以整合在現有的CMOS半導體製程上。本研究將針對於應用在鐵電記憶體上,使用Hf1-xZrxO2作為鐵電層,藉著不同物理厚度、不同摻雜比例,以及退火溫度等條件,探討分析其在記憶體應用方面的表現。

    關鍵字:鉿基氧化物、負電容電晶體、次臨界擺幅、金屬-鐵電層-金屬結構、鐵電電晶體。

    In recent years, Hafnium-based oxides, have experienced intensive studies and have already been widely application, such as FeRAM, negative-capacitance (NC) FET, and other related fields. With the application of NC-FET, by breaking through the subthreshold swing limit (60 mV/dec,) the reduction in operating voltage (VDD) can results in lower power consumption. Moreover, Hafnium-based oxides can be used 1T-1C and 1T structure memory. In this work, devices are made into MIM structure or FET to study characteristic performance by different conditions such as annealing temperatures and dopant contents.

    Keyword: Hafnium-based Oxide, NC-FET, subthreshold swing, metal-ferroelectric film-metal structure, FeFET

    目錄 第一章 緒論 1-1 簡介 1 1-2 鐵電記憶體 3 第二章 鐵電薄膜簡介與鐵電記憶體之操作原理和電性量測及特性 2-1 鐵電薄膜之結構 4 2-2 鐵電薄膜應用於記憶體之操作原理 4 2-3 鐵電薄膜量測及電性分析 7 2-3-1 Hysteresis loop (P-V curve) & 2-3-2 C-V 9 2-3-3 Recovery (Wake-up) 11 2-3-4 Remanent measurement 13 2-3-5 Retention 19 2-3-6 Endurance 22 第三章 鐵電材料Hf1-xZrxO2用於金屬-鐵電薄膜-金屬(MFM)結構之鐵電記憶體應用 3-1 鐵電記憶體簡介 25 3-2 鐵電HfO2-based之文獻探討 26 3-3 鐵電材料Hf1-xZrxO2試制和研究 32 3-3-1 金屬-絕緣層-金屬(MIM)結構試製 33 3-3-2 不同退火(Annealing)溫度條件 34 3-3-3 不同Zr摻雜比例條件 34 3-3-4 量測及分析 35 3-4 結論 41 第四章 鐵電材料HfZrO2用於電晶體之鐵電記憶體應用 4-1 簡介 43 4-2 1T-FeFET NVM文獻探討 44 4-3 鐵電電晶體(FeFET)試製 51 4-4 鐵電電晶體(FeFET)記憶體應用 52 4-4-1 簡介 52 4-4-2 量測和分析 54 4-5 結論 97 第五章 結論與未來工作 5-1 結論 99 5-2 未來工作 101 參考文獻 102

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