研究生: |
彭敏軒 Peng, Min-Hsuan |
---|---|
論文名稱: |
HfOx 電阻式記憶體的量子化行為 Quantized behavior of HfOx memristor |
指導教授: |
江佩勳
Jiang, Pei-hsun |
學位類別: |
碩士 Master |
系所名稱: |
物理學系 Department of Physics |
論文出版年: | 2020 |
畢業學年度: | 108 |
語文別: | 中文 |
論文頁數: | 36 |
中文關鍵詞: | 電阻式記憶體 |
DOI URL: | http://doi.org/10.6345/NTNU202001443 |
論文種類: | 學術論文 |
相關次數: | 點閱:127 下載:0 |
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電阻式記憶體屬於非揮發性記憶體,能夠於斷電後依然保存記憶,而因為製程與結構簡單、面積小、操作電壓低、切換速度快、使用壽命長,是目前擁有很高發展潛力的記憶體種類之一。在目前以過渡金屬的氧化物為材料的記憶體為主流,也在研究中取得相當多的成果。
但若要放在實際應用上,卻還是需要對電阻式記憶體的運作機制有更多的認識。
而本篇文章將討論工研院所製成之TiN/Ti/HfO2/TiN之雙極性電阻轉換RRAM元件,探究其在物理上的結構與其在物理上的特性,並對樣品在量測時施以不同的量測方式,包含不同的限電流、不同的SET時間與其他能夠探測其電性特性的量法,以此觀察樣品對這些參數的反應,並以此去探究、分析樣品於高電阻態、低電阻態、與兩者切換時的電流傳導機制,最終再利用所獲得、統計出的控制參數,使樣品得以較易發生量子化現象,並觀察與解釋樣品的電流量子化階梯。
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