研究生: |
謝敏男 |
---|---|
論文名稱: |
熱處理對氧化銦錫薄膜特性之研究 The Effect of Heat Treatment on the Characteristics of ITO Thin Films |
指導教授: |
程金保
Cheng, Chin-Pao 劉傳璽 Liu, Chuan-His |
學位類別: |
碩士 Master |
系所名稱: |
機電工程學系 Department of Mechatronic Engineering |
論文出版年: | 2012 |
畢業學年度: | 100 |
語文別: | 中文 |
論文頁數: | 90 |
中文關鍵詞: | 熱處理 、氧化銦錫 、電阻率 、透光率 |
英文關鍵詞: | Heat treatment, ITO, Resistivity, Transmittance |
論文種類: | 學術論文 |
相關次數: | 點閱:273 下載:17 |
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藉由射頻磁控濺射(RF Magnetron sputter)技術在P型矽上鍍上N型的ITO薄膜,沉積之後在不同的溫度及厚度條件下進行退火,並觀察薄膜結構與光電特性之變化。透過XRD來觀察薄膜的晶態結構,發現薄膜呈現非晶態結構,在熱退火後薄膜會朝向(222)的方向形成多晶成長的晶格排列。從光電特性中發現,所有ITO薄膜在波長400~900 nm下擁有將近90% 的透光率。能帶間隙大約介於3.47~3.73 eV,實驗顯示增加退火溫度,能帶間隙也會跟著增加,但是薄膜厚度增加,能帶間隙反而會跟著減少。在導電特性上,在100 nm的ITO薄膜於600℃以及純氮氣的退火環境下,可以得到最小片電組(24.79Ω/□)以及電阻率(2.48x10-4 Ωcm)。從電容-電壓特性曲線所量測到的電容大小,我們可以發現到,當ITO薄膜厚度為100 nm且600℃的退火條件下,可以得到較大的電容量(約為387.5 pF)以及較大的儲存電量。因此ITO薄膜擁有良好的特質並且適合做為太陽能電池方面的應用。
N-type ITO thin films were deposited on p-Si at room temperature by RF sputtering in argon ambient. The thickness of ITO film ranges from 100 to 300 nm. After deposition, the films were annealed at 400, 500 or 600℃ and the heat treatment was performed in N2 ambient. This study investigates the effect of post-deposition heat treatment on structural, optical and electrical properties of the ITO films. The ITO films were of good quality and therefore suitable for applications in solar cells.
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