研究生: |
陳右諭 Chen Yo Yu |
---|---|
論文名稱: |
砷化鎵/砷化氮鎵 量子井的調制光譜研究 Photoreflectance Research of GaAs/GaNAs Quantum Wells Structure |
指導教授: |
陸健榮
Lu, Chien-Rong |
學位類別: |
碩士 Master |
系所名稱: |
物理學系 Department of Physics |
論文出版年: | 2001 |
畢業學年度: | 89 |
語文別: | 中文 |
論文頁數: | 85 |
中文關鍵詞: | 量子井 、砷化氮鎵 、光調制反射光譜 、有效質量 、能帶落差 |
英文關鍵詞: | Quantum Well, GaNAs, Photoreflectance, effective mass, band offsets |
論文種類: | 學術論文 |
相關次數: | 點閱:266 下載:9 |
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摘要
我們以光調制反射光譜(PR)來研究由MOCVD長成的GaAs/GaNxAs1-x 多量子井結構(MQW)。實驗結果發現能量在GaAs能隙以上的譜形,有兩組FKO振盪譜形,而能量在GaAs能隙以下的譜形是GaNxAs1-x能隙與GaAs/GaNxAs1-x量子井躍遷所產生的訊號,藉由分析FKO振盪譜形,可以推算樣品的內建電場。
當GaNxAs1-x /GaAs 多量子井能帶的排列方式為type-Ⅰ型且能帶落差Qc:Qv=8.8:1.2時,最能符合譜形的躍遷訊號,此外,藉由量子井躍遷的能階,來分析在不同N含量下,GaNxAs1-x電子的有效質量:當N含量分別為0.9% 與4%時,GaNxAs1-x電子的有效質量為0.08m0與0.41m0。
Photoreflectance Research of GaAs/GaNxAs1-x
Quantum Wells Structure
ABSTRACT
We have studied the GaAs /GaNxAs1-x multiple quantum wells grown by Metal-Organic Chemical Vapor Deposition using photoreflectance at various temperatures and nitrogen contents . The photoreflectance spectral features above the energy gap of GaAs include two sets of Franz-Keldish oscillations ,and features
below the energy gap of GaAs are the GaNAs energy gap transtion and the quantum well excitionic interband transtions . By the analysis of the line shapes of the Franz-Keldish oscillations , we obtained the built-in electric fields of the sample .
The interband transition energies for multiple quantum wells with different nitrogen contents and well widths can be well fitted if a type -Ⅰband line up of GaAs/GaNxAs1-x multiple quantum wells and band offsets with Qc:Qv=8.8:1.2 are assumed . Furthermore , we are able to determine the electron effective mass for GaNxAs1-x as a function of x . The electron effective masses are =0.08mo and 0.41mo with N composition of 0.9% and 4.0% ,respectively.
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