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研究生: 呂學儒
Lyu, Syue-Ru
論文名稱: 弱局化效應與弱反局化效應在a-IGZO薄膜電晶體中的競爭現象
Competing weak localization and weak antilocalization in amorphous indium–gallium–zinc-oxide thin-film transistors
指導教授: 江佩勳
Jiang, Pei-hsun
學位類別: 碩士
Master
系所名稱: 物理學系
Department of Physics
論文出版年: 2017
畢業學年度: 105
語文別: 中文
論文頁數: 36
中文關鍵詞: 弱局化效應弱反局化效應低溫
DOI URL: https://doi.org/10.6345/NTNU202202581
論文種類: 學術論文
相關次數: 點閱:60下載:3
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  • 我們在低溫環境並給予外加垂直磁場,進行對a-IGZO薄膜電晶體的測量,發現了正磁導率與負磁導率並存的現象,且並存比例會隨閘極電壓而變,這是由於弱局化(weak localization)與弱反局化效應(weak anti localization)在其中以不同的比例彼此競爭。我們分別研究了不同閘極電壓與不同溫度下的競爭模式,並將兩者所佔的權重化為實際數值α0 與α1進行分析。根據我們的研究,隨著閘極電壓上升,α0會微幅上升,但|α1|會有很明顯的上升,而隨著溫度上升,α0會在一定的區間中維持震盪,但|α1|則會快速下降。接著我們發現了即使是通道尺寸和ID–VG性質都顯著不同的樣品,其α0、α1都會與零磁場時的電導率有普適相關(universal dependence)。

    1.研究動機與文獻探討 P7 2.實驗原理簡介 P10 2-1 弱局化效應與弱反局化效應 P10 2-2 氧化銦鎵鋅 P14 2-3 場效電晶體 P14 2-4 基本電性參數與其公式 P16 3.實驗儀器 P17 3-1 致冷機 P17 3-2 乾式氦氣循環系統 P17 3-3 3He樣品桿 P18 3-4 電壓電流源供應器 P19 3-5 真空幫浦站 P19 4.樣品結構 P20 5.致冷機操作方法簡介 P21 6.數據處理方法 P22 7.結果與討論 P23 7-1 弱局化效應與弱反局化效應競爭現象 P23 7-1-1 基本電性量測 P23 7-1-2 調變閘極電壓控制WL與WAL競爭現象 P24 7-1-3 調變溫度控制WL與WAL競爭現象 P26 7-1-4 由理論驗證a-IGZO二維系統 P28 7-2 競爭現象與電導率普適相關 P29 7-2-1 基本電性量測 P29 7-2-2 競爭現象與電導率普適相關 P31 8.結論 P34 9.參考文獻 P35

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