研究生: |
呂學儒 Lyu, Syue-Ru |
---|---|
論文名稱: |
弱局化效應與弱反局化效應在a-IGZO薄膜電晶體中的競爭現象 Competing weak localization and weak antilocalization in amorphous indium–gallium–zinc-oxide thin-film transistors |
指導教授: |
江佩勳
Jiang, Pei-hsun |
學位類別: |
碩士 Master |
系所名稱: |
物理學系 Department of Physics |
論文出版年: | 2017 |
畢業學年度: | 105 |
語文別: | 中文 |
論文頁數: | 36 |
中文關鍵詞: | 弱局化效應 、弱反局化效應 、低溫 |
DOI URL: | https://doi.org/10.6345/NTNU202202581 |
論文種類: | 學術論文 |
相關次數: | 點閱:78 下載:3 |
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我們在低溫環境並給予外加垂直磁場,進行對a-IGZO薄膜電晶體的測量,發現了正磁導率與負磁導率並存的現象,且並存比例會隨閘極電壓而變,這是由於弱局化(weak localization)與弱反局化效應(weak anti localization)在其中以不同的比例彼此競爭。我們分別研究了不同閘極電壓與不同溫度下的競爭模式,並將兩者所佔的權重化為實際數值α0 與α1進行分析。根據我們的研究,隨著閘極電壓上升,α0會微幅上升,但|α1|會有很明顯的上升,而隨著溫度上升,α0會在一定的區間中維持震盪,但|α1|則會快速下降。接著我們發現了即使是通道尺寸和ID–VG性質都顯著不同的樣品,其α0、α1都會與零磁場時的電導率有普適相關(universal dependence)。
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