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研究生: 吳旭展
Wu, Hsu-Chan
論文名稱: 在N型矽基板以鋁誘發多晶矽薄膜以及ZnO:Al(AZO)抗反射層之太陽能電池研究
A study of p-type polycrystalline silicon fabricated by Al-induced crystallization and ZnO:Al(AZO) ARC layer on photovoltaic applications
指導教授: 李亞儒
Lee, Ya-Ju
學位類別: 碩士
Master
系所名稱: 光電工程研究所
Graduate Institute of Electro-Optical Engineering
論文出版年: 2015
畢業學年度: 103
語文別: 中文
論文頁數: 69
中文關鍵詞: 鋁誘發矽多晶矽AZO太陽能電池
英文關鍵詞: ZnO:Al(AZO), aluminum-induced crystallization, poly-crystalline silicon, solar cell
論文種類: 學術論文
相關次數: 點閱:73下載:1
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  • 本論文是利用射頻磁控濺鍍系統,分別濺鍍鋁、矽薄膜,經由熱退火方式,使鋁誘發矽形成p型多晶矽,於本質矽基板之上利用不同退火時間進而達到摻雜的目的;並及量測及分析p-type矽薄膜之電性。進而探討應用於n型矽基板上,製備成太陽能電池元件後並量測光電轉換特性。
    並研究ZnO:Al (AZO)薄膜濺鍍於塑膠基板上,在不同的薄膜厚度量測其薄膜的電特性及光特性,得到一ρ=4 x 10-4Ω-cm、μ=21 cm2/V·s、 n=6.4 x1020 1/cm3、可見光部分穿透率 75% 等特性於1100 nm之ZnO:Al (AZO)薄膜。
    最後分別使用AZO薄膜以及鋁製備於電極部分進行太陽能電池光電轉換量測,最終我們在Al/p-Si/n-Si wafer/Al 結構上獲得一開路電壓為0.41V,光電流為0.38 mA/cm2 ,轉換效率為0.1% 的太陽能光伏元件。

    In this work, we fabricated ZnO:Al(AZO)/p-polycrystalline-Si solar cells on n-type silicon wafer. The p-type polycrystalline silicon films were prepared by aluminum-induced crystallization and doping. First, we deposited Aluminum and amorphous silicon bilayers on intrinsic silicon wafer using a rf- sputtering system. We changed the annealing times of the aluminum-induced crystallization to get good conducting p-type polycrystalline-Si films, and then deposited them on n-type silicon wafers to fabricate the p-n junction solar cells.
    AZO thin films were grown on PET flexible plastic substrates at room temperature and optimize the growth conditions were optimized to improve the transparency and electrical properties. With the room-temperature growth conditions, the resistivity of 4.5  10-4 Ω cm, carrier concentration of 6.4  1020 cm-3, and transmittance of 75% for the 1100-nm-thick film were obtained.
    AZO and Al films have been used to be the front electrodes for the AZO(Al)/p-polycrystalline-Si/n-silicon-wafer structured solar cells. Finally, an open circuit voltage of 0.41 V, a photocurrent of 0.38 mA, and a photoelectric conversion of 0.1% for the solar cells are obtained.

    目錄 致 謝 IV 摘 要 V Abstract VI 第一章 序論 1 1-1 前言 1 1-2研究動機與目的 1 第二章 實驗原理 4 2-1 氧化鋅(ZnO)透明導電膜之發展及材料特性 4 2-2鋁金屬誘導矽結晶發展及原理 6 2-3濺鍍原理 8 2-4霍爾效應與四點探針量測[11] 11 2-5 X光繞射原理(XRD, X-ray diffraction)[13] 14 2-6原子力顯微鏡(Atomic Force Microscope,AFM)[33] 17 2-7 掃描式電子顯微鏡(SEM, Scanning Electron Microscope) [16][17] 19 2-8離子蝕刻[34] 23 2-9熱退火原理(Thermal Annealing)[35] 23 2-10 太陽能電池(Solar Cell)原理 [31][32] 24 第三章 實驗步驟與設備 31 3-1 AZO靶材製作 31 3-2 薄膜製備流程 32 3-3 濺鍍系統 32 3-4矽、鋁薄膜熱退火 35 3-5 化學機械研磨技術(CMP) 36 3-6 AFM 原子力顯微鏡 39 3-7元件製作 39 3-9 霍爾量測 42 3-10 元件光電流量測 44 第四章 實驗結果與討論 45 4-1 ZnO:Al(AZO)光電特性 45 4-2 p型矽鋁薄膜 51 4-3 化學機械研磨技術(CMP) 59 4-4 元件光電分析 61 第五章 結論 66 文獻回顧 67

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