俱鐵電效應之鉿基氧化物於近幾年吸引相當多討論，在適當的摻雜與退火後將具有鐵電特性，可應於記憶體及鐵電負電容效應。後者於在電晶體應用，可改善次臨界擺幅 (Subthreshold Swing)以達陡峭斜率特性，將大幅降低元件操作電壓，具有低功耗元件應用價值。且鉿基氧化物本身與目前CMOS製程高相容性，於45nm後在業界已導入二氧化鉿介電層使用，故期望本論文提出之技術能夠於未來5nm以下技術節點使用。
本研究將針對不同摻雜與退火條件之鉿基氧化物，以元件應用為前提進行直流操作、快速操作的研究，以及利用串接的方式，把有鐵電特性的MFM (Matel-Ferroelectric-Matel)結構或是FeFET (Ferroelectric Field Effect Transistors)，串接在一般介電質的電晶體上，預期改善次臨界擺幅，跟Al：HfO2（FE-HAO）場效應電晶體的鐵電性並應用於負電容效應。
根據量測結果顯示，利用1530快速量測IdVg時，檔位的調整非常的重要，在限流的影響下要找到最適合的檔位。7.9%的HAO在1000℃的熱退火處理下，SS正反掃出現了SS=40 mV/dec及SS=39mV/dec，呈現了很好的物理極限，成為具有潛力的MOSFET。

Ferroelectric hafnium–based oxide has attracted lots of attention by proper dopants and annealing. It could be applied to the memory and negative capacitance (NC) FET. The latter is good for FET with steep Subthreshold Swing (SS) and reducing power consumption, which is achieved by Hafnium–based oxides. This may a promising candidate for low power device application. Furthermore, the Hafnium–based oxides are highly compatible process with current CMOS due to the material widely used in semiconductor industry.
This study focuses on the hafnium–based oxides with different conditions of dopants and annealings, and operatation conditions of DC sweep and transient behavior. By using cable connection with series method, a Fe-MFM and Fe-FET conneted in another conventional dielectric material transistor to improve SS. Ferroelectric Al:HfO2 (FE-HAO) gate stack adopted on field effect transistor for NC-FET is discussed.
The IdVg current range of fast IV measurement by Keysight 1530A is very imptant to adjust of the parameters under the current limit. The optimized SS for= 40mV/dec and SS rev=39mV/dec are observed with 7.9% HAO after 1000 °C RTA.

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