研究生: |
黃紹嘉 HUANG, Shao-Jia |
---|---|
論文名稱: |
摻雜之二硫化硒層狀材料在作為場效應電晶體通道對降低源/汲極接觸電阻之研究 Study of Doping Layered-WSe2 Material as Field Effect Transistor Channel for Source/Drain Contact Resistance Reduction |
指導教授: |
李敏鴻
Lee, Min-Hung 鍾朝安 Jong, Chao-An |
學位類別: |
碩士 Master |
系所名稱: |
光電工程研究所 Graduate Institute of Electro-Optical Engineering |
論文出版年: | 2016 |
畢業學年度: | 104 |
語文別: | 中文 |
論文頁數: | 103 |
中文關鍵詞: | 二硫化硒 、二硒化鎢 、二硫化鉬 、接觸電阻 、硒化 |
英文關鍵詞: | MoS2, WS2, WSe2, Contact Resistance, Selenization |
DOI URL: | https://doi.org/10.6345/NTNU202204028 |
論文種類: | 學術論文 |
相關次數: | 點閱:119 下載:0 |
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近幾年,過渡金屬硫屬化合物因為具有能隙關係,比同樣具有二維結構的石墨烯更適合用在電晶體元件製作,因此吸引很研究學者的興趣。其中WSe2是屬於P型的半導體更特別引人關注,然而一直缺乏一個穩定可控制的摻雜技術,難度頗高。本篇將開發一個穩定可行的摻雜製程,利用共濺鍍製程技術加上後硒化處理。希望用這個方法能夠讓電晶體的載子濃度及載子遷移率提升,讓通道電阻及接觸電阻有效的降低。
Recently, two dimensional transition metal dichalcogenides (TMDs) compounds have drawn much interest due to their potential in TFT channel application than Graphene which without bandgap. Among these 2D materials, p-type WSe2 is particularly attractive. However, precise doping of WSe2 is difficult due to the absence of a controllable doping technique. In this paper, a controllable WSe2 doping method by co-sputtering process followed by post selenization treatment is demonstrated. Using this technique, high acceptor doping concentration and good hole mobility were obtained. Low sheet resistance and contact resistance were obtained.
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