氫，氮'-雙氰基蔥酉昆二亞胺（N, N'-dicyanoanthraquinone diimines, DCNAQIs) 可與銅或銅離子形成電荷轉移型錯合物（charage transfer complexes）。此類化合物屬於半導體（Or.t=3.3×10-2~6.8×10-7Scm-1)，能帶間隙（bandgap）約在0.08~0.40eV。
利用電解法(E=-0.2V vs. SCE)或自然沉積法，此類半導體已被成功的在ITO玻璃或銅片上製備成薄膜電極。由循環伏安法及Mott-Schottky Plots分別得知Cu(DCNAQI)/ITO薄膜電極屬N型半導體，而Cu(DCNAQI)/Cu薄膜電極為P型半導體。
利用Cu(DCNAQI)薄膜電極進行氧氣及氫氣之偵測與液相中溶氣量之測量，發現具拉電子取代基之Cu(DCNAQI)如Cu(α,α'-dichloro DCNAQI)或Cu(β-CI DCNAQI)等對氧氣之感測工較佳；而具推電子取代基者如Cu(β-me DCNAQI)則對氫氣有較佳之感測度。

Substituted dicyanoanthraquinone diimines, DCNAQIs, and their related copper complexes, Cu(DCNAQI), have been synthesized and subjected to electrochemical investigations. Most Cu(DCNAQI) complexes possess an activation energy 0.08~0.40eV and strongly absorb in IR range. Cyclic voltammetry reveals a characteristic of n-type semiconductor for thin-filmed Cu(DCNAQI)/ITO electrodes; on the other hand, Cu(DCNAQI)/Cu electrodes behave like p-type semiconductor by AC impedence analysis.
Under bandgap excitation (4000 cm-1), the photoconductance measured with thin-filmed Cu(DCNAQI)/Cu electrodes was greatly promoted in nitrogen, but very sensitive to the presence of hydrogen. In plot of the conductance difference, △O/Odark=(Olight-Odark)/Odark, vs partial pressure of hydrogen in nitrogen, Cu(β-me DCNAQI)/Cu showed the greatest sensitivity for detection of hydrogen. Nevertheless, thin-filmed Cu(β-CI DCNAQI)/ITO electrodes in aqueous solution or Cu(β-CI DCNAQI)Cu electrodes in nonaqueous solution gave best oxygen sensing activity.