研究生: |
羅子鈞 Luo, Zih-Jyun |
---|---|
論文名稱: |
具有時序交錯且取樣率為200MS/s之無時脈10位元逐次逼近暫存式類比數位轉換器 A Clock-Free 200MS/s 10-bit Time-Interleaved SAR ADC |
指導教授: |
郭建宏
Kuo, Chien-Hung |
學位類別: |
碩士 Master |
系所名稱: |
電機工程學系 Department of Electrical Engineering |
論文出版年: | 2019 |
畢業學年度: | 107 |
語文別: | 中文 |
論文頁數: | 61 |
中文關鍵詞: | 無時脈 、時間交錯 、類比數位轉換器 、逐次逼近暫存器式 |
英文關鍵詞: | clock-free, time-interleaved, analog-to-digital converters, successive approximation register |
DOI URL: | http://doi.org/10.6345/NTNU201901007 |
論文種類: | 學術論文 |
相關次數: | 點閱:152 下載:1 |
分享至: |
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
在近年來,因半導體技術的快速發展、科技產品的推陳出新,行動通訊裝置日益普及。隨著行動通訊裝置的需求越來越高,高效能且低功耗的通訊裝置成為電路設計的主流。除了價錢和實用性外,對於便利性和品質更是講究。因此,在眾多的類比數位轉換器架構中,逐次逼近式類比數位轉換器(Successive Approximation Register ADC, SAR ADC)最符合本研究所需要的條件。其架構簡單,只需要一個比較器即可完成類比數位轉換,是目前最省電的架構。此外,由於製程技術逐年提升,在高速類比數位轉換器中,SAR ADC也開始嶄露頭角。
本論文提出一個無需時脈產生器的逐次逼近式類比數位轉換器,其ADC只需觸發一有效信號即可使內部自行產生所需之時脈信號。此架構運用了時序交錯的技術,除了取樣率等效於兩倍外,兩個SAR ADC僅需透過一控制電路即可使取樣和比較階段進行交替。本研究是採用TSMC 90nm 1P9M CMOS製程,在供應電源為1.2V和等校取樣率為200MHz的模擬下,所得到的信號雜訊比為58.94dB,INL和DNL分別為0.734/-0.552及0.735/-0.404,總消耗功率為4.9mW,品質因數為33.7-fJ/conversion-step。
In recent years, mobile communication devices are more popular due to the rapid development of semiconductor technology and the innovation of technology products. Nowadays, the mainstream products trends are high-performance and low-power mobile communication devices. In addition to price and practicality, the mobile communication devices are more convenient and quality. Therefore, in all of analog-to-digital converter (ADC) types, successive approximation analog-to-digital converter (SAR ADC) is appropriate for this research design. It is the most power-efficient architecture since its simple structure using only one comparator which is needed to complete whole sampling data during each conversion phase. Besides, in high-speed analog-to-digital converters, SAR ADC can be implemented with the advanced process.
In the thesis, a clock-free 200-MS/s 10-bit time-interleaved (TI) successive approximation register analog-to-digital converter is proposed. The presented SAR ADC can generate required clock by itself while an active signal is asserted. In the presented TI structure, two SAR ADCs are alternated with entering sample and comparison phases by the control circuit, and thus the equivalent sample rate can be doubled. The presented ADC is simulated under TSMC 90nm 1P9M CMOS process. Under a supply voltage of 1.2-V and an equivalent sampling rate of 200-MS/s, the resulted SNDR of the proposed ADC is 58.94 dB, which is equivalent to the ENOB of 9.50-bit. The simulated DNL and INL are within 0.735 / -0.404 and 0.734 / -0.552, respectively. The total power consumption of 4.9 mW and the figure of merit(FOM) is 33.7-fJ/conversion-step。
[1] K.-L. Lin, A. Kemna, and B. J. Hosticka, Modular low-power, high-speed CMOS analog-to-digital converter for embedded systems, Kluwer Academic Publishers, 2003
[2] B. Razavi, Design of Analog CMOS Integrated Circuits, McGraw-Hill Companies, Inc., 2002.
[3] D. A. Johns and K. Martin, Analog CMOS Integrated Circuit Design, John Wiley & Sons, Inc., 1997.
[4] R. Jacob Baker, CMOS: Mixed-Signal Circuit Design, Second Edition, John Wiley & Sons, Inc., 2008.
[5] J. McCreary and P. Gray, "A high-speed, AII-MOS, successive-approximation weighted capacitor A/D conversion technique," 1975 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, Philadelphia, PA, USA, 1975, pp. 38-39.
[6] W. Liu and Y. Chiu, "Time-Interleaved Analog-to-Digital Conversion With Online Adaptive Equalization," in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 59, no. 7, pp. 1384-1395, July 2012.
[7] J. He, S. Zhan, D. Chen and R. L. Geiger, "Analyses of Static and Dynamic Random Offset Voltages in Dynamic Comparators," in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 56, no. 5, pp. 911-919, May 2009.
[8] C. Liu, S. Chang, G. Huang and Y. Lin, "A 10-bit 50-MS/s SAR ADC With a Monotonic Capacitor Switching Procedure," in IEEE Journal of Solid-State Circuits, vol. 45, no. 4, pp. 731-740, April 2010.
[9] Jiren Yuan and C. Svensson, "New TSPC latches and flipflops minimizing delay and power," 1996 Symposium on VLSI Circuits. Digest of Technical Papers, Honolulu, HI, USA, 1996, pp. 160-161.
[10] H. Russell, "An improved successive-approximation register design for use in A/D converters," in IEEE Transactions on Circuits and Systems, vol. 25, no. 7, pp. 550-554, July 1978.
[11] G. Manganaro, D Robertson, "Interleaving ADCs — Unraveling the mysteries", Analogue Dialogue, vol. 49, Jul. 2015.
[12] B. P. Ginsburg and A. P. Chandrakasan, "Dual Time-Interleaved Successive Approximation Register ADCs for an Ultra-Wideband Receiver," in IEEE Journal of Solid-State Circuits, vol. 42, no. 2, pp. 247-257, Feb. 2007.
[13] C. Hsieh and S. Liu, "A 0.3V 10bit 7.3fJ/conversion-step SAR ADC in 0.18μm CMOS," 2014 IEEE Asian Solid-State Circuits Conference (A-SSCC), KaoHsiung, 2014, pp. 325-328.
[14] L. Kull et al., "A 3.1mW 8b 1.2GS/s single-channel asynchronous SAR ADC with alternate comparators for enhanced speed in 32nm digital SOI CMOS," 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers, San Francisco, CA, 2013, pp. 468-469.
[15] B. P. Ginsburg and A. P. Chandrakasan, "500-MS/s 5-bit ADC in 65-nm CMOS With Split Capacitor Array DAC," in IEEE Journal of Solid-State Circuits, vol. 42, no. 4, pp. 739-747, April 2007.
[16] C. H. Kuo and C. E. Hsieh, "Floating capacitor switching SAR ADC," in Electronics Letters, vol. 47, no. 13, pp. 742-743, 23 June 2011.
[17] L. He et al., "A Speed-Enhancing Dual-Trial Instantaneous Switching Architecture for SAR ADCs," in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 62, no. 1, pp. 26-30, Jan. 2015.
[18] D. Xing et al., "Seven-bit 700-MS/s Four-Way Time-Interleaved SAR ADC With Partial Vcm-Based Switching," in IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 25, no. 3, pp. 1168-1172, March 2017.
[19] V. Hariprasath, J. Guerber, S. -. Lee and U. -. Moon, "Merged capacitor switching based SAR ADC with highest switching energy-efficiency," in Electronics Letters, vol. 46, no. 9, pp. 620-621, 29 April 2010.
[20] Y. Zhu et al., "A 10-bit 100-MS/s Reference-Free SAR ADC in 90 nm CMOS," in IEEE Journal of Solid-State Circuits, vol. 45, no. 6, pp. 1111-1121, June 2010.
[21] C. C. Lee and M. P. Flynn, "A SAR-Assisted Two-Stage Pipeline ADC," in IEEE Journal of Solid-State Circuits, vol. 46, no. 4, pp. 859-869, April 2011.
[22] V. Tripathi and B. Murmann, "A 160 MS/s, 11.1 mW, single-channel pipelined SAR ADC with 68.3 dB SNDR," Proceedings of the IEEE 2014 Custom Integrated Circuits Conference, San Jose, CA, 2014, pp. 1-4.
[23] R. K. Palani and R. Harjani, "A 220-MS/s 9-Bit 2X Time-Interleaved SAR ADC With a 133-fF Input Capacitance and a FOM of 37 fJ/conv in 65-nm CMOS," in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 62, no. 11, pp. 1053-1057, Nov. 2015.
[24] J. Zhong, Y. Zhu, C. Chan, S. Sin, S. U and R. P. Martins, "A 12b 180MS/s 0.068mm2 With Full-Calibration-Integrated Pipelined-SAR ADC," in IEEE Trans. Circuits Syst. I: Reg. Papers, vol. 64, no. 7, pp. 1684-1695, July 2017.
[25] D. Li, Z. Zhu, R. Ding and Y. Yang, "A 1.4-mW 10-Bit 150-MS/s SAR ADC With Nonbinary Split Capacitive DAC in 65-nm CMOS," in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 65, no. 11, pp. 1524-1528, Nov. 2018.