顯示器隨著人們使用上的需要，輕巧便利及耐用可靠性，已經成為產品所追求的主流價值，所以可彎曲式軟性顯示器，將是企業下一世代所開發的重點。目前可彎曲式軟性顯示器，都以a-Si:H材料為主，但是外部彎曲下，卻會改變其材料本身的缺陷態(DOS)，支配著TFT的特性。
本論文第二章節，就針對軟性顯示器在不同彎曲的程度下，對其所改變的DOS，來進行研究與討論。我們準備了由工研院所提供的 a-Si:H 與 μc-Si:H 兩種材料的TFT，藉由不同曲率下的模型，進行tensile與compressive的彎曲實驗，並計算出不同曲率下的DOS，以便觀察材料改變了哪些物理特性？了解為何在彎曲下，TFT的電性會受其影響的原因。
第三章節，我們使用了一些具有低電阻率又加上strain效果的
Ni/stGe，作Schottky Contact的研究，並比較Laser Annealing及RTA
哪種是較佳的回火機制。同時在此章節內，我們也討論一些具有前瞻性的材料，在半導體接面上的應用。例如，Si:C/Si結合成n+/p和p+/n 接面，或是Ni/Si:C應用在Schottky Contact等研究，以便可真正應用在未來先進製程，改善當前元件效能上所面臨的問題。

The display on the need for people to use, lightweight facilitate the reliability and durability, has become the mainstream products by the pursuit of value, can be soft-bending displays, next generation enterprises will be developed by the focus. Currently flexible displays, to a-Si:H based materials, but tensil strain, but will change its own material DOS, dominate the TFT characteristics.
The second chapter, the DOS of the flexible display for different degree of bending, we study and discuss the results.
We are prepared by the ITRI provided by the a-Si:H and μc-Si:H TFTs, by the curvature of the different models, tensile and compressive bending experiments, and calculate the curvature of the different DOS, in order to observe the material change what physical characteristics, to understand why the bending under, TFTs, will be affected by sexual reasons.
The third chapter, we use a number of low-resistivity Strain added effect of Ni/stGe, Schottky contact for the study and compared Laser annealing and RTA which is a better mechanism for annealing.
At the same time in this chapter, we also discussed a number of advanced materials, in the semiconductor junction to the application.
For example,Si:C/Si combined n+/p and p+/ n junction, or Ni/Si:C used in Schottky contact, and so on, in order to be truly applied in the future advanced manufacturing process, improve the effectiveness of the current components on the face Problems.

Chapter 1:
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[2]李敏鴻,軟性顯示器之開發與進展,奈米通訊,14卷1期,pp.35–41,2007.
[3]M.H. Lee,K.-Y. Ho,P.-C.Chena C.-C. Cheng,S.T. Chang,
M. Tang,M.H. Liao ,and Y.-H. Yeh,”Promising a-Si:H TFTs with High Mechanical Reliability for Flexible Display ”, IEDM Digest of Technical Digest,pp.299-302.
Chapter 2:
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Chapter 3:
[1]M.H. Lee,P. S. Chen, W.-C. Hua , and C.-Y. Yu, ” Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs ”,in IEEE IEDM Tech. Dig.,PP.69-72, 2003.
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[3]Z. Ye,Y. Kim,and A. Zojaji , ”A Study of Low Energy Phosphorus Implantation and Annealing in Si:C Epitaxial Films,”Semicond. Sci. Technol.,Vol. 22 ,PP.171-174,2007.
[4]M. H. Lee, S. T. Chang, S. W. Lee, P. S. Chen, K.-W. Shen,and W.-C. Wang,"Strained-Si with Carbon Incorporation for MOSFET Source/Drain Engineering ",Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V), pp. 107-108, Hachioji, Tokyo, Japan, Nov. 12-14, 2007.
[5] S.M. SZE,“ Semiconductor Devices Physics and Technology“,Murray Hill,New Jersey, 1985.
[6]M. H. Lee,S. T. Chang,S. Maikap,K.-W. Shen,and W.-C. Wang,“ Short Channel Effect Improved Strained-Si:C-Source/Drain PMOSFETs, ”Fifth International
Symposium on Control of Semiconductor Interfaces (ISCSI-V), pp. 203-204,Hachioji,Tokyo,Japan,Nov. 12-14, 2007.
[7]R.T.-P. Lee ,” Route to Low Parasitic Resistance in MuGFETs with Silicon-Carbon Source/Drain: Integration of Novel Low Barrier Ni(M)Si:C Metal Silicides and Pulsed Laser Annealing" ,IEDM Digest of Technical Digest,pp.685-688, 2007.
[8]S. Zaima, O. Nakatsuka, H. Kondo1, M. Sakashita, A. Sakai,and M. Ogawa, ”NiSilicide and Germanide Technology for Contacts and Metal Gates in MOSFET
Applications ”, 8th Solid-State and Integrated Circuit Technology(ICSICT),2006.
[9]K. Ikeda,Y. Yamashita, and N. Sugiyama, ” Modulation of NiGe/Ge Schottky Barrier Height by Sulfur Segregation during Ni-Germanidation ",Applied Physics Letters,Vol.88, 152115,2006.
[10]S. Zhu,A. Nakajima,Y. Yokoyama, and Kensaku ,”Temperature Dependence of Ni-Germanide Formed by Ni-Ge Solid-State Reaction”,5th International Workshop on Junction Technology,pp. 85-88, 2005.