陽極接合技術常被應用於微機電元件的組裝，是目前微機電製程中相當倚重的一種接合技術。主要藉由離子鍵結的方式來達到接合的目的；故兩接合表面平整度要求非常高，屬於無介質的接合方式。而接合過程中電極的幾何形狀可造成不同的接合效果，原因是當通入直流電壓時，首先發生接合現象是在上電極與玻璃接觸的下方。若選用大面積的上電極；使電極完全的與玻璃晶片接觸，平均電場的分佈可使電極下方同時發生接合。因而可改善接合的速度，但接合的品質並沒有單點電極來的好，原因在大面積的電極在接合時，會在介面上產生氣孔。對於單點式電極，其接合區域是慢慢擴張出去，因此接合面的殘存氣體也會被驅趕出去，不易形成氣泡，接合品質相當好，但接合速度相當緩慢。
本研究提出一種新式的電弧放電接合方式，並搭配特殊電極幾何形狀的排列方式，來改善陽極接合的速度及氣泡問題。實驗結果證實，利用輻射狀線電極在定電壓900 V、溫度400 ℃及放電間隙120 um條件下，進行4吋晶片接合時，接合時間約為17秒，且接合良率可至99.98 %左右。

Anodic bonding techniques are often used in MEMS components assembly, which is the micro-electromechanical system is heavily dependent on the process of a mount technology. Mainly through the ionic bond to attain the purpose of bonding; Both bonding surface roughness is high Media is no way of bonding. And the bonding process of electrode geometry can cause different interface effects, because when passed through DC voltage, First bonding phenomena occur on the electrode is in contact with the bottom of the glass. If the choice of a large area on the electrode; Planer electrode full contact with the glass chips, The average distribution of the electric field can simultaneously bottom electrode interface. It can improve the interface speed, but the quality of engagement and no single point electrodes to the good, reason for the large area of the electrode interface, the interface will have a stoma. For single-electrode, its interface region is slowly expanding out, the residual gas washer will be evicted Bubble formation is not easy, the interface quality is very good, but the bonding speed has been rather slow.
This study proposes a new type of interface arc discharge method, and a special mix of electrode geometry of the arrangement. anodic bonding to improve the speed and bubble problem. The experimental results confirmed that the use of radial line in determining electrode voltage 900 V, temperature of 400 ° C and discharge gap 120 um conditions, Bonding time of four-inch chip is about 17 seconds, and Bonding ratio to be about 99.98 %.

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