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研究生： 邱彥璉
Chiu, Yan-Lian
論文名稱： 應用於輸出級驅動電路之靜電放電防護設計
On-Chip ESD Protection Design for Output Driver Applications
指導教授： 林群祐
Lin, Chun-Yu
學位類別： 碩士
Master
系所名稱： 電機工程學系
Department of Electrical Engineering
論文出版年： 2016
畢業學年度： 104
語文別： 英文
論文頁數： 74
中文關鍵詞： 靜電放電 、輸出驅動器 、矽控整流器
英文關鍵詞： electrostatic discharge (ESD), output driver, silicon-controlled rectifier (SCR)
DOI URL： https://doi.org/10.6345/NTNU202204086
論文種類： 學術論文
相關次數： 點閱：181  下載：38 
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    • 隨著製程演進，晶片微縮，靜電放電(ESD)容易造成晶片內部的電子元件遭受到不可逆之破壞，而所有的微電子產品必須符合此可靠度的規範。因此，靜電放電防護的可靠度議題必須被探討。
    在積體電路的應用上，本論文設計了幾種新型的靜電放電防護元件，此元件在 0.18um 1.8V/3.3V CMOS製程下實現。透過實驗分析的結果，防護元件可以承受較大的訊號擺幅和能夠耐受 2kV 的人體放電模式之靜電放電測試。
    為了驗證靜電放電防護元件在實際電路上的效能，本論文使用堆疊元件的輸出級驅動器並搭配嵌入式矽控整流器（Embedded SCR）。一種新型的靜電放電防護設計被提出來，為了改善其靜電放電的防護能力。此電路在 0.18um 1.8V/3.3VCMOS製程下實現。本論文所提出的防護設計經實際驗證，在不影響電路正常操作的情況下，有效改善其靜電放電的防護能力，證明所提出的設計可以改善靜電放電防護的能力。

    關鍵字：靜電放電，輸出驅動器，矽控整流器

    With the continuous evolution of semiconductor integrated circuits (ICs) process, electrostatic discharge (ESD) events are likely to cause internal electronic components of the wafer suffered irreversible damage. All microelectronic products must meet the reliability specifications. Therefore, ESD must be taken into consideration.
    In the application of integrated circuit, several novel ESD protection devices are designed in this work. By designing the structure, this work has been fabricated in 0.18-μm 1.8V/3.3V CMOS process. In the experimental results, this design can achieve large swing tolerance and endure 2kV human-body-model (HBM) test.
    In order to verify the protection ability of ESD protection device on the circuits, a novel design of stacked-device output driver with embedded silicon-controlled rectifier
    (SCR) is proposed to improve the ESD robustness. This work has been fabricated in 0.18-um 1.8V/3.3V CMOS process. Besides, the transient behaviors of the proposed design during normal operation are not degraded. Therefore, the proposed design can be used to improve the ESD robustness of stacked-device output driver.

    Keywords: electrostatic discharge (ESD), output driver, silicon-controlled rectifier (SCR).

    Abstract (Chinese) I Abstract (English) II Acknowledgment III Contents V Table Captions VII Figure Captions VIII Chapter 1 Introduction 1 1.1 Background of ESD 1 1.2 Models of ESD 1 1.3 Typical Design of On-Chip ESD Protection Circuits 3 1.3.1 ESD Protection Design with Diode 4 1.3.2 ESD Protection Design with GGNMOS 5 1.3.3 ESD Protection Design with SCR 6 1.4 Applications for Output Driver 8 1.4.1 Architecture of Electrical Stimulator 8 1.4.2 ESD Protection Challenges 10 1.5 Thesis Organization 12 Chapter 2 Novel Dual-Directional SCR in Output Stage with Monopolar Configuration 13 2.1 Introduction 13 2.2 ESD Robustness of Stand-Alone Output Stage with monopolar configuration 15 2.3 ESD Protection Design for Output Stage 18 2.3.1 DDSCR-Based Devices for CMOS On-Chip ESD Protection 18 2.3.2 Novel Dual-Directional SCR 20 2.4 Experimental Results of novel DDSCR 22 2.4.1 Measured TLP I-V Characteristics 22 2.4.2 Measured DC I-V Characteristics 26 2.4.3 Measured ESD Robustness 30 2.4.4 Measured Parasitic Capacitance 30 2.4.5 Document Comparison of DDSCR 33 2.5 Summary 33 Chapter 3 Novel Embedded SCR Device in Output Stage with Bipolar Configuration 34 3.1 Introduction 34 3.2 Design of Novel High Voltage Output Driver 37 3.3 Proposed ESD Protection Design for Stacked-Device Output Driver 44 3.4 Experimental Results 47 3.4.1 Transient Waveforms 48 3.4.2 ESD Robustness and TLP I-V Characteristics 52 3.4.3 Reliability of Novel High Voltage Output Driver 63 3.4.4 Document Comparison of High Voltage Output Drivers 63 3.5 Summary 64 Chapter 4 Conclusions and Future Works 65 4.1 Conclusions 65 4.2 Future Works 66 References 67 Vita 73 Publication List 74

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