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研究生: 鄭智璟
Cheng, Chih-Ching
論文名稱: 符合CMOS製程之鐵電負電容電晶體及自我對準之鰭式穿隧型電晶體試製
Fabrication of Ferroelectric Negative Capacitance MOSFETs and Self-Aligned Fin-Shaped TFETs Compatible with CMOS Process
指導教授: 李敏鴻
Lee, Min-Hung
學位類別: 碩士
Master
系所名稱: 光電工程研究所
Graduate Institute of Electro-Optical Engineering
論文出版年: 2015
畢業學年度: 103
語文別: 中文
論文頁數: 54
中文關鍵詞: 陡峭次臨界擺幅穿隧型電晶體鰭式穿隧型電晶體
英文關鍵詞: steep subthreshold swing, TFET, fin-shaped TFET
論文種類: 學術論文
相關次數: 點閱:93下載:0
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  • 在次世代COMS製程結點,改善次臨界擺幅去降低元件之操作電壓及功率損耗極為重要。而在本論文之實驗使用鐵電材料HfOX/ZrOX做為電晶體之閘極介電層(CET=0.98),應用鐵電材料之負電容效應改善先閘極製程之電晶體次臨界擺幅。
    穿隧型電晶體式使用穿隧機制,改善次臨界擺幅,而穿隧型電晶體的製程S/D方面需要clear之光罩(非自對準製程),此種光罩在製作小線寬時最大的困難點在於光罩與光罩對準,另外在元件微縮後,會使得閘極控制力下降,造成多於功率消耗,而在論文實驗中使用鳍式結構,來加強閘極控制力,S/D使用了dark光罩(自對準製程)製作鳍式穿隧型電晶體,全程使用i-line黃光製程成功驗證自對準製程應用於鳍式穿隧型電晶體。

    The enhancement performance of steep swing may reduce power consumption and be a candidate of next generation technology node in CMOS industry.In this work, the superior subthreshold swing is obtained by NC effect with dielectric CET=0.98nm, which the combination of HfOX/ZrOX was used.
    The self-aligned fin-shaped TFET without space between gate and source/drain is demonstrated successfully, and the fabrication process using all i-line photolithograph stepper without e-beam writer. The high ON current (> 10A) is obtained and indicates the benefit of self-alignment process. The proposed fin-shaped TFET process leads the opportunity of the advanced devices fabrication by 6-inch process with i-line photolithograph stepper.

    目錄 Publication………………………………………………………………………I 中文摘要 …………………………………………………………………II Abstract………………………………………………………………………III 致謝…………………………………………………………………………….IV 目錄……………………………………………………………………………V 圖目錄………………………………………………………………………..VII 表目錄………………………………………………………………………..XI 第一章緒論 1-1追求陡峭次臨界擺幅………………………………………………………1 第二章文獻回顧與論文導讀 2-1負電容元件的實作文獻……………………………………………………4 2-2鐵電材料-鉿基氧化物…………………………………………………8 2-3鰭式電晶體的實作文獻…………………………………………………11 第三章 鐵電負電容電晶體 3-1 實驗動機………………………………………………………………14 3-2 先閘極鐵電負電容電晶體……………………………………15 3-2-1先閘極元件製作程…………………………………………………15 3-2-2先閘極元件之HfOX/ZrOX之分析………..………………………17 3-2-3先閘極元件之TEM結構分析……………………………………… 20 3-2-4先閘極元件之量測…………………………………………………21 3-3後閘極鐵電負電容電晶體製作與量測…………………………………23 3-4鐵電負電容電晶體之結論………………………………………………29 第四章 自我對準之鳍式穿隧型電晶體 4-1 實驗動機…………………………………………………………………30 4-2自對準鰭式穿隧型電晶體製作流程與設計 ……………………………31 4-2-1 元件製作流程…………………………..……………………………31 4-2-2元件製作之討論……………………………………………………33  4-2-3 矽基板鳍式平台製作………………………………………………36  4-2-4鳍式穿隧型電晶體之閘極定義及退火……………………………40 4-3 鳍式穿隧型電晶體之量測與分析………………………………………43 4-4鳍式穿隧型電晶體之結論…………………………………………45 第五章結論與未來工作 5-1 綜合討論…………………………………………………………………46 5-2 未來工作…………………………………………………………………48 參考文獻……………………………………………………………………50 附錄 …………………………………………………………………54

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