我們利用電子束微影製程技術配合化學電鍍沈積的方式製作出整齊而又有週期性排列，具有介電材料的半導體晶體二維硒化鎘柱狀構。首先利用電子束曝光、顯影等步驟，在覆蓋電子阻劑的ITO透明導電玻璃上，定義出數十個平方微米區域，接著在這些區域中電鍍上Ⅱ-Ⅵ族的半導體-硒化鎘，最後再用丙酮將電子阻劑洗去，製作出週期性排列又規則整齊的二維硒化鎘柱狀晶體結構。
以電鍍溶液： 1 M CdSO4(aq) ,0.3 mM SeO2(aq) , 18 M H2SO4 ,H2O(18 Mohm)，循環電壓儀（cyclic voltammetry）進行電鍍反應，參考電極電壓介於 – 400 mV ～ -800mV 之間，掃瞄速率(Scan rate) 750mV/s ，在此電化學反應條件下，可有效的控制硒化鎘柱狀結構的成長速率：電鍍第一圈之後，每圈以平均的 38.8 nm的成長高度，形成了成長高度線性的關係。實驗中我們做到的硒化鎘柱狀結構最小直徑為80nm，所做出的柱狀結構高度最高為640nm，相當於電子阻劑的厚度，最大柱狀晶體結構的深寬比可達到8：1；若電鍍時，柱狀晶體高度超過電子阻劑厚度，便會生成硒化鎘香菇形結構。最後，我們在分析上分別做了兩項量測：硒化鎘柱狀晶體在能量分散光譜儀（EDS）的分析及在紅外線-拉曼散射光譜儀吸收譜峰量測。

We demonstrate a unique method for fabrication of two dimensional (2D) arrays of CdSe pillars with large aspect (height-to-width) ratios for optics applications. The fabrication technique combines electron beam lithography for periodic pattern definition and chemical electrodeposition for the growth of 2D arrays of CdSe pillars. The arrays are made on a relatively small area, about square of tenths of microns.
In this method, cyclic voltammetric deposition with resist-coated indium tin oxide substrate as the working electrode, Pt slab as the counter-electrode and the saturated calomel electrode as reference electrode is performed. The pillars of semiconductor are synthesized by electrochemical deposition from aqueous solution of CdSO4 , SeO2 and H2SO4. During the electrodeposition, the working electrode potential relative to SCE is swept between – 400 mV and – 800 mV at several scan rates. After the first cycle, the heights of the CdSe pillars are found to increase linearly with number of cycles, and the growth rate is about 38.8 nm per cycle. After electrodeposition, the samples are soaked in an acetone bath to remove the resist mask.
With this technique, the pillar with a large aspect ratio of 8 is achievable. The minimum diameter of the pillar is 80 nm. The height of the pillar can be as large as 640 nm, which is about the thickness of the resist layer. Depositing CdSe pillars to a height over the resist will result in a mushroom structure. The geometry of the fabricated pillars is examined by scanning electron microscope and atomic force microscope, while their properties are characterized by energy-dispersive spectrometer and infrared Raman-scattering spectrometer.

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