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研究生： 李懿泓
Li, Yi-Hong
論文名稱： 無機鈣鈦礦電阻式記憶發光二極體光電整合元件之製作與研究
A fabrication of optoelectronic device integration by inorganic perovskite-based RRAM and LEDs
指導教授： 李亞儒
Lee, Ya-Ju
學位類別： 碩士
Master
系所名稱： 光電工程研究所
Graduate Institute of Electro-Optical Engineering
論文出版年： 2018
畢業學年度： 106
語文別： 中文
論文頁數： 54
中文關鍵詞： 鈣鈦礦 、發光二極體 、熱注入 、發光電化學 、電阻式記憶體 、常溫合成
英文關鍵詞： Perovskite, hot injection, Light Emitting Diodes(LEDs), Light-emitting electrochemical cell(LEC), Resistive random-access memory(RRAM), Room-Temperature Synthesis
DOI URL： http://doi.org/10.6345/THE.NTNU.EPST.014.2018.E08
論文種類： 學術論文
相關次數： 點閱：158  下載：0 
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    • 本文的研究主體：全無機CsPbX3(X = Br，I，Cl )之鈣鈦礦材料於發光二極體之發光層與元件結構之應用。針對無機鈣鈦礦薄膜材料的製程並使其發光。除此之外，使用常溫法合成無機鈣鈦礦，並縮短其製成時間。採用X光繞射儀(XRD)、電子顯微鏡(SEM)、光激發螢光光譜(PL)鑑定鈣鈦礦材料特性，進一步應用至本文多層鈣鈦礦發光元件的結構。
    藉由調控鈣鈦礦陰離子的比例，發出不同波長的光，使用Ocean Optics USB4000光譜儀量測樣品電致發光光的波段，並設計鈣鈦礦電化學發光元件(LEC)與電阻式記憶體(RRAM)的結合。

    In this study,we use hot-injection method and Room-Temperature Synthesis. The characteristics of perovskite materials were identified by X-ray diffraction (XRD), electron microscopy (SEM) and photoluminescence (PL), and further applied to the structure of multilayer perovskite light-emitting diodes. Emites different wavelengths by regulating the proportion of perovskite anions.And Integrated LEC and RRAM.

    摘要 i Abstract ii 致謝 iii 目次 iv 表次 vii 圖次 viii 第一章、序論 1 1-1 量子點材料基本論述 1 1-2 研究動機與目的 2 1-3 文獻回顧 3 第二章、實驗儀器與原理 4 2-1半導體量子點基本論述 4 2-2 鈣鈦礦量子點基本論述 8 2-2-1 鈣鈦礦結構 9 2-2-2 製備CsPbX3量子點的方法 10 2-2-2-1 以高溫熱注入法製備 10 2-2-2-2 以室溫合成法製備 12 2-2-2-3 合成方式─室溫合成法和高溫熱注入法比較 12 2-2-3 鈣鈦礦量子點材料之特性 13 2-2-3-1 CsPbX3型態調控 14 2-2-3-2 CsPbX3陰離子交換特性 14 2-3 CsPbX3 (X = Cl，Br，I)量子點材料光學性質分析 15 2-3-1 CsPbX3 (X = Cl，Br，I)量子點材料光學性質量測 16 2-3-1-1 光致激發螢光原理(PL, Photo Luminescent) 16 2-4 以CsPbX3 (X = Cl，Br，I)製備電致發光元件 18 2-5 射頻磁控濺鍍原理 20 2-6 掃描式電子顯微鏡 23 2-7 有機發光二極體的構造及運作原理 27 第三章、實驗儀器與流程 29 3-1 實驗用品 29 3-2 鈣鈦礦量子點CsPbBr3合成(熱注入法) 30 3-2-1 油酸銫前趨物之配置 30 3-2-2 鈣鈦礦量子點CsPbBr3合成 30 3-2-3 鈣鈦礦量子點純化 31 3-3 CsPbBr3室溫合成法 32 3-3-1 前趨物配置 32 3-3-2 CsPbBr3量子點合成 32 3-4 濺鍍系統 32 3-5 LED樣品製作流程 34 3-5-1 陽極 34 3-5-2 電洞傳輸層 34 3-5-3 發光層 34 3-5-4 電子傳輸層 34 3-5-5 陰極 35 3-6 黑箱量測 37 第四章、實驗結果 39 4-1 CsPbBr3鈣鈦礦量子點晶體結構鑑定 39 4-2 CsPbBr3應用於LED之元件特性與光譜 40 4-3 CsPbBr3應用於LEC元件之I-V特性與光譜 42 4-4 CsPbX3 (X =Cl、Br、I)不同陰離子應用於LEC之特性與光譜 44 4-5 鈣鈦礦應用於LEC與記憶體 45 第五章 結論 49 第六章 參考文獻 50

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