研究生: |
陳品光 |
---|---|
論文名稱: |
增強型及負電容閘極之氮化鎵-基高功率元件研究 The study of GaN-Based with Enhancement-mode and negative capacitor integration for power application |
指導教授: |
李敏鴻
Lee, Min-Hung |
學位類別: |
碩士 Master |
系所名稱: |
光電工程研究所 Graduate Institute of Electro-Optical Engineering |
論文出版年: | 2013 |
畢業學年度: | 101 |
語文別: | 中文 |
論文頁數: | 70 |
中文關鍵詞: | 氮化鎵 、負電容 、增強型 |
英文關鍵詞: | GaN, negative capacitor, Enhancement-mode |
論文種類: | 學術論文 |
相關次數: | 點閱:244 下載:0 |
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近年來地球暖化造成氣候變遷,使得節能方面的議題備受重視,Hybrid複合式電動車被視為減緩石油消耗提升能源使用效率的產品,然而在高電壓的驅動下,傳統的電晶體已無法滿足這類的需求,發展高電壓及高轉換效率的電晶體近年來相當熱門。
由於氮化鎵材料耐高溫及耐腐蝕特性且電性方面氮化鎵的高電子遷移率(~1500 cm2/V-s) ,3.4 eV的寬能隙(wide bandgap)、5 MV/cm的高崩潰電壓(high breakdown voltage)等優良特性,近年來被廣泛應用在高功率元件(High Power Device)被視為取代傳統矽基IGBT。
我們提出四元結構(In、Al、Ga、N)阻障層,調整能障高度,成功製作出增強型金氧半氮化鎵電晶體得到臨界電壓(threshold voltage) Vth=0.65V為通道常關(normally-off)的操作,飽和電流約40 mA/mm操作在VGS=4V 且 VDS=10V時,元件線寬為LG=15m且 LGD=20m。此外,在已完成的氮化鎵電晶體整合負電容材料改善次臨界擺幅、轉導(transconductance)與通道電導(channel conductance),並利用AFM (Atomic Force Microscope)、XRD、RSM(Reciprocal space mapping)及TEM(Transmission Electron Microscopy)等進行材料分析。
In recent years, global warming caused by climate change, making the issue of energy efficiency has attracted increasing attention, Hybrid hybrid electric vehicle is deemed to slow oil consumption increase energy efficiency of products, but in the high-voltage driver, the traditional transistors have been unable to to meet such needs, the development of high voltage and high conversion efficiency of transistors very popular in recent years.
Owing to GaN high temperature and corrosion resistant materials and electrical properties, GaN high electron mobility (~ 1500 cm2/Vs), 3.4 eV wide bandgap (wide bandgap), 5 MV / cm high breakdown voltage (high breakdown voltage) and other fine features, in recent years, is widely used in High Power Device. GaN-based power devices have been expected to replace conventional Si-based IGBT (Insulated Gate Bipolar Transistor).
We propose four quaternary structures (In, Al, Ga, N) barrier layer, adjust the barrier height, The quaternary InAlGaN-barrier GaN MOS-HEMT with enhancement-mode operation was demonstrated. The MOS-HEMT with LG=15m and LGD=20m has Vth=0.65V and maximum drain current 40 mA/mm at VDS=10V. In addition, integrate negative capacitance material with GaN transistors improvement subthreshold swing, transconductance and channel conductance, and using AFM (Atomic Force Microscope), XRD, RSM (Reciprocal space mapping ) and TEM (Transmission Electron Microscopy), etc. material Analysis.
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