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研究生: 林昇璋
Lin Sheng Chang
論文名稱: 矽∕鍺 複合半導體系統的調制光譜研究
Electroreflectance Study of Si/Ge Compound Semiconductors
指導教授: 陸健榮
Lu, Chien-Rong
學位類別: 碩士
Master
系所名稱: 物理學系
Department of Physics
論文出版年: 2002
畢業學年度: 90
語文別: 中文
論文頁數: 89
中文關鍵詞: 矽/鍺 合金矽/鍺 多重量子井電場反射調制
英文關鍵詞: Si/Ge alloys, Si/Ge multiple quantum wells, Electroreflectance (ER)
論文種類: 學術論文
相關次數: 點閱:200下載:4
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  • 摘要
    我們利用電場調制反射光譜(ER)來研究由MBE長成的矽鍺合金和矽鍺多重量子井樣品。實驗結果發現在低溫矽上成長的矽鍺合金有一躍遷能量約820meV的躍遷訊號,並將此一躍遷能帶稱為alloy-band
    。此外,隨著樣品中低溫矽的磊晶溫度增加,電場調制效率有明顯增加的趨勢。
    矽鍺多重量子井樣品由於應力對能帶結構的影響,實驗結果觀察到應力作用後的躍遷能量,我們並利用K-P模型推算出量子井的躍遷能量,計算所得到的躍遷能量符合調制光譜的實驗結果。

    ABSTRACT
    We have investigated the Si1-xGex alloy and Si/Ge multiple quantum wells grown by Solid Source Molecular Beam Epitaxy (MBE) using electroreflectance (ER) at various temperatures. The ER spectral features with photon energy about 820meV correspond to the transition involving the alloy- band of the ioselectronic centers in the Si1-xGex alloys. The efficiency of ER modulation is enhanced with increasing growth temperature of the low temperature-Si.
    We have also studied all the principal optical transitions in strained Si/Ge multiple quantum well structures. The quantum wells confined energy levels were calculated by K-P model. The transitions involving the quantum states are compared with observed spectral features.

    目錄 摘要………………………………………………………………… 目錄………………………………………………………………… 圖目錄……………………………………………………………… 第一章 矽、鍺 簡介…………………………………………… 1 第二章 調制光譜原理 2-1 電子躍遷理論………………………………………… 3 2-2 光學函數與電子躍遷的關係………………………… 6 2-3 調制光譜的基本原理………………………………… 12 2-4 電場調制……………………………………………… 16 2-5 弱電場調制…………………………………………… 19 第三章 實驗與結果 3-1 樣品結構……………………………………………… 21 3-1-1 矽鍺合金層…………………………………………… 21 3-1-2 矽鍺多重量子井……………………………………… 22 3-2 電場調制實驗及裝置……………………………… 23 3-3 調制光譜的實驗結果 …………………………… 25 3-3-1 矽鍺合金層…………………………………………… 25 3-3-2 矽鍺多重量子井……………………………………… 25 第四章 分析與討論 4-1 矽與鍺的能帶結構………………………………… 27 4-2 矽、鍺複合半導體的能帶結構…………………… 29 4-2-1 矽鍺合金成分對能帶結構的影響………………… 29 4-2-2 應力對能帶結構的影響…………………………… 31 4-2-3 矽鍺能帶結構的分析……………………………… 35 4-3 矽鍺合金層調制光譜的分析………………………… 40 4-3-1 alloy-band 的緣由…………………………… 40 4-3-2 矽鍺合金的光譜分析…………………………… 43 4-4 矽鍺多重量子井調制光譜的分析…………………… 46 4-4-1 矽鍺多重量子井能帶間躍遷…………………… 46 4-4-2量子井子能階躍遷的計算與分析……………… 46 第五章 結論與展望………………………………………… 51 圖(2-1)~圖(4-18)……………………………………………… 52~ 85 參考文獻………………………………………………………… 86

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